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Optically Enhanced Oxidation

  • Chapter
Interfaces Under Laser Irradiation

Part of the book series: NATO ASI Series ((NSSE,volume 134))

Abstract

The use of intense optical radiation to stimulate the oxidation of silicon is described. By summarising all of the data published so far in the field, it is found that there must be several different mechanisms responsible for the observed effects on the oxidation process. It is emphasised that thermal effects are a dominant factor in the reactions, but that so-called photonic enhancement are evidently present when both visible and ultraviolet radiation are used. Possibile mechanisms for the enhancement modes of the reaction are proposed.

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Author information

Authors and Affiliations

  1. Electronic and Electrical Engineering, University College London, Torrington Place, London, WC1E 7JE, England

    Ian W. Boyd

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  1. Ian W. Boyd
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Editor information

Editors and Affiliations

  1. Faculté des Sciences, Université de l’Etat, av. Maistriau, 7000, Mons, Belgium

    L. D. Laude

  2. Angewandte Physik, Johannes Kepler Universität Linz, 4040, Linz, Austria

    D. Bäuerle

  3. Faculté des Sciences, Université de l’Etat, Mons, Belgium

    M. Wautelet

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© 1987 Springer Science+Business Media Dordrecht

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Boyd, I.W. (1987). Optically Enhanced Oxidation. In: Laude, L.D., Bäuerle, D., Wautelet, M. (eds) Interfaces Under Laser Irradiation. NATO ASI Series, vol 134. Springer, Dordrecht. https://doi.org/10.1007/978-94-017-1915-5_23

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  • DOI: https://doi.org/10.1007/978-94-017-1915-5_23

  • Publisher Name: Springer, Dordrecht

  • Print ISBN: 978-90-481-8304-3

  • Online ISBN: 978-94-017-1915-5

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