Abstract
Reduction in dimension of microelectronic devices has been pursued in order to attain high performance, so that the conductor width in an advanced LSI is approaching 0.1 micron. Since it is exposed to high temperature conditions during the processing and in the service due to high electric current density, the atom migration along grain boundary (GB) and interface (IF) brings about serious damage such as a cavity. As only one cavity is fatal for the microcircuit, the characteristics of growth must be understood precisely.
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© 2001 Springer Science+Business Media Dordrecht
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Kitamura, T., Shibutani, T. (2001). Cavity Growth Induced by Electric Current and Stress in LSI Conductor. In: Murakami, S., Ohno, N. (eds) IUTAM Symposium on Creep in Structures. Solid Mechanics and its Applications, vol 86. Springer, Dordrecht. https://doi.org/10.1007/978-94-015-9628-2_11
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DOI: https://doi.org/10.1007/978-94-015-9628-2_11
Publisher Name: Springer, Dordrecht
Print ISBN: 978-90-481-5623-8
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