Abstract
Epitaxy of Si on Si substrates by CVD is an old technique. Developed to improve the performance of bipolar transistors and integrated circuits, it is finding increasing application in CMOS circuits as well. In both cases an epitaxial layer is grown on top of a substrate to contain the active devices. Shrinking device dimensions, laterally as well as vertically, require small transition widths for a change in dopant type or concentration and traditional silicon-epi growth with its high deposition temperatures is becoming more and more incompatible with modern wafer processing. Outdiffusion of dopants and autodoping preclude the use of conventional epi in tailoring dopant profiles in e.g. the base of a bipolar transistor.
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References
Wolf, S. and Tauber, R.N. (1986) Silicon Processing for the VLSI era, Vol.1 Ch.5, Silicon epitaxial film growth, Lattice Press, Sunset Beach, California.
Pearce, C.W. (1983) Epitaxy, in S.M. Sze (ed.),VLSI technology, McGraw-Hill Book Company, New York, pp. 51–92.
Srinivasan, G.R. and Meyerson, B.S. (1987) Current status of reduced temperature silicon epitaxy by chemical vapor deposition, J. Electrochem. Soc. 134, 1518–1524.
People, R. and Bean, J.C. (1985) Calculation of critical layer thickness versus lattice mismatch for GexSi1-x/Si strained-layer heterostructures, Appl. Phys. Leu. 47, 322–324.
Houghton, D.C., Gibbings, C.J., Tuppen, C.G., Lyons, M.H. and Halliwell, M.A.G. (1990) Equilibrium critical thickness for Sii-xGex strained layers on (100) Si, Appl. Phys. Lett. 56, 460–462.
Houghton, D.C., Perovic, D.D., Baribeau, J.-M. and Weatherly, G.C. (1990) Misfit strain relaxation in GexSi1-x/Si heterostructures: the structural stability of buried strained layers and strained-layer superlattices, J. Appl. Phys. 67, 1850–1862.
Iyer, S. S., Patton, G.L., Stork, J. M. C., Meyerson, B.S. and Harame, D.L. (1989) Heterojunction bipolar Transistors using Si-Ge alloys, IEEE Trans. El. Dev. 36, 2043–2064.
Bean, J.C. (1992) Silicon-based semiconductor heterostructures: column IV bandgap engineering, Proc. IEEE 80, 571–587.
Meyerson, B.S., Ganin, E., Smith, D.A. and Nguyen, T.N. (1986) Low temperature silicon epitaxy by hot wall ultrahigh vacuum/low pressure chemical vapor deposition techniques: surface optimization, J. Electrochem. Soc. 133, 1232–1235.
Meyerson, B.S., LeGoues, F.K., Nguyen, T.N. and Harame, D.L. (1987) Nonequilibrium doping effects in low-temperature epitaxial silicon, Appl. Phys. Lett. 50, 113–115.
Meyerson, B.S., Uram, K.J. and LeGoues, F.K. (1988) Cooperative growth phenomena in silicon/germanium low temperature epitaxy, Appl. Phys. Lett. 53, 2555–2557.
Smith, F.W. and Ghidini, G. (1982) Reaction of oxygen with Si (111) and (100). Critical conditions for the growth of SiO2, J. Electrochem. Soc. 129, 1300–1306.
Ghidini, G. and Smith, F.W. (1984) Interaction of H20 with Si (111) and Si (100). Critical conditions for the growth of SiO2, J. Electrochem. Soc. 131, 2924–2928.
Meyerson, B.S. (1992) UHV/CVD growth of Si and Si:Ge alloys: chemistry, physics, and device applications, Proc. IEEE 80, 1592–1608.
Patton, G.L., Comfort, J.H., Meyerson, B.S., Crabbé, E.F., Scilla, G.J., de Frésart, E., Stork, J.M.C., Sun, J.Y.-C., Harame, D.L. and Burghartz, J.N (1990) 75-GHz fT SiGe-base Heterojunction Bipolar Transistors, IEEE El. Dev. Lett. 11, 171–173.
Gibbons, J.F., Gronet, C.M. and Williams, K.E. (1985) Limited reaction processing: silicon epitaxy, Appl. Phys. Lett. 47, 721–723.
Hoyt, J.L., King, C.A., Noble, D.B., Gronet, C.M., Gibbons, J.F., Scott, M.P., Laderman, S.S., Rosner, S.J., Nauka, K., Turner, J. and Kamins, T.I. (1990) Limited reaction processing: Growth of Si1-xGex/Si for heterojunction bipolar transistor applications, Thin Solid Films 184, 93–106.
King, C.A., Hoyt, J.L., Noble, D.B., Gronet, C.M., Gibbons, J.F., Scott, M.P., Kamins, T. and Laderman, S.S. (1989) Electrical and material quality of Si/Si1-xGex/Si p-n heterojunctions produced by limited reaction processing, IEEE El. Dev. Lett. 10, 159–161.
Sedgwick, T.O., Berkenblit, M. and Kuan, T.S. (1989) Low-temperature selective epitaxial growth of silicon at atmospheric pressure, Appl. Phys. Lett. 54, 2689–2691.
Agnello, P.D. and Sedgwick, T.O. (1992) Inhibition of silicon oxidation during low temperature epitaxial growth, J. Electrochem. Soc. 139, 1140–1146.
Robinson, McD. and Lawrence, L.H. (1988) Characterization of high growth rate epitaxial silicon from a new single wafer reactor, in D.C. Gupta (ed), 5th International symposium on semiconductor processing, ASTM STP 990, American Society for Testing and Materials, Philadelphia.
Agnello, P.D., Sedgwick, T.O., Meyer, D. and Ferro, A.P. (1990) Growth of silicon-germanium alloys by atmospheric-pressure chemical vapor deposition at low temperatures, in S.S. Iyer, D.C. Houghton and M.L. Green (eds.), Proceedings of the first topical symposium on silicon based heterostructures (37th AVS Symposium), pp. 46–50.
Kamins, T.I. and Meyer, D.J. (1990) Epitaxial deposition of strained Si1-xGex layers by atmospheric-pressure CVD, 78th ECS Meeting Ext. Abstr. 90–2, 685–686.
De Boer, W.B. and Meyer, D.J. (1990) Low-temperature chemical vapor deposition of epitaxial Si and SiGe layers at atmospheric pressure, Appl. Phys. Lett. 58, 1286–1288.
Van Oostrum, K.J., Zalm, P.C., de Boer, W.B., Gravesteijn, D.J. and Maes, J.W.F. (1992) Characterization of epitaxial layers by the depth dependence of boron diffusivity, Appl. Phys. Lett. 61, 1513–1515.
Grützmacher, D.A., Sedgwick, T.O., Powell, A., Tejwani, M., Iyer, S.S., Cotte, J. and Cardone, F. (1993) Ge segregation in SiGe/Si heterostructures and its dependence on deposition technique and growth atmosphere, Appl. Phys. Lett. 63, 2531–2533.
Sedgwick, T.O., Agnello, P.D., Nguyen Ngoc, D., Kuan, T.S. and Scilla, G. (1991) High phosphorus doping of epitaxial silicon at low temperature and atmospheric pressure, Appl. Phys. Lett. 58, 1896–1898.
Agnello, P.D., Sedgwick, T.O and Cotte, J. (1993) Growth rate enhancement of heavy n- and p-type doped silicon deposited by atmospheric-pressure chemical vapor deposition at low temperatures, J. Electrochem. Soc. 140, 2703–2709.
Lapiano-Smith, D.A. and McFeely, F.R. (1992) Mechanism for diborane induced selectivity loss in the chemical vapor deposition of silicon from SiH2C12, J. Appl. Phys. 71, 4544–4546.
Kamins, T.I., Vook, D.W., Yu, P.K. and Turner, J.E. (1992) Kinetics of selective epitaxial deposition of Si1-xGex, Appl. Phys. Lett. 61, 669–671.
Kamins, T.I. (1993) Pattern sensitivity of selective Si1-xGex chemical vapor deposition: Pressure dependence, J. Appl. Phys. 74, 5799–5802.
Sato, F., Hashimoto, T., Tatsumi, T., Kitahata, H. and Tashiro T. (1992) Sub20psec ECL circuits with 50GHz fmax self-aligned SiGe HBT’s, IEEE IEDM, Technical Digest, 397–400.
Pruijmboom, A. (1995) IEEE IEDM, Technical Digest, in press.
Sato, F., Tatsumi, T., Hashimoto, T., and Tashiro, T. (1994) A super self-aligned selectively grown SiGe base (SSSB) bipolar transistor fabricated by cold-wall type UHV/CVD technology, IEEE Trans. El. Dev. 41, 1373–1378.
Lou, J.-C., Galewski, C. and Oldham, W.G. (1991) Dichlorosilane effects on lowtemperature selective silicon epitaxy, Appl. Phys. Lett. 58, 59–61.
Meyerson, B.S., Himpsel, F.J. and Uram, K.J. (1990) Bistable conditions for lowtemperature silicon epitaxy, Appl. Phys. Lett. 57, 1034–1036.
Meyerson, B.S. (1994) High-speed silicon-germanium electronics, Scientific American March 1994, 42–47.
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de Boer, W.B. (1996). Rapid Thermal Chemical Vapour Deposition of Epitaxial Si and SiGe. In: Roozeboom, F. (eds) Advances in Rapid Thermal and Integrated Processing. NATO ASI Series, vol 318. Springer, Dordrecht. https://doi.org/10.1007/978-94-015-8711-2_16
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DOI: https://doi.org/10.1007/978-94-015-8711-2_16
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