Abstract
This paper presents a state-of-the-art review of the materials and processes required for the realization of physical structures with dimensions considerably smaller than the devices and circuits that are mass-produced today for computer and electronic equipment use.
Extremely small structures (nanostmctures) with dimensions between 200 and 10 nm are very useful in exploring the effects of downscaiing silicon and III-V compound field-effect transistors (FET) and other small devices that are used to test new principles, such as ballistic and quantum effects. Electron beams are ideally suited for this exploratory work because they are easy to use and they do not require physical masks since they can be programmed to write the desired structure directly via a personal computer (PC). For this reason the paper will focus on electron beam microfabrication, although many processes are common to other forms of radiation such as UV light. X-rays or ion beams.
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References
S. Magdo, M. Hatzakis, and C.H. Ting, ”Electron Beam Fabrication of Micron Transistors”, IBM J. Res.Develop.l5, 446–451, (1971).
F. Fang, M. Hatzakis, and C.H. Ting, ”Electron Beam Fabrication of Ion Implanted High Performance FET Circuits”, J.Vac.Sci.and Technol. 10, No.6, 1082–1085, (1973).
M. Sopira and P. Malmberg, ”Fabrication of Integrated CMOS Transistors Using Electron Lithography and Ion Implantation, J. Vacand Technol. 10, No.6, 1086–1089, (1973).
A.N. Broers, ”Resolution Limits of PMMA Resist for Exposure with 50 KV Electrons”, Proceedings of the Symposium on Electron and Ion Beam Science and Technology, ECS Inc.Princeton, NJ, 396–406, (1980).
G.G. Shahidi, D.A. Antoniadis, and H.I. Smith, ”Electron Velocity Overshoot at 300 K and 77 K in Silicon MOSFETs with Submicron Channel Lengths”, IEDM Tech.Digest, p.824, (1986).
G.A. Sai-Halasz, M.R. Wordeman, D.P. Kern, S. Rishton, and E. Ganin, “High Transconductance and Velocity Overshoot in NMOS Devices at the 0.1 urn Gate-length Level”, IEEE Electron Device Lett., Vol.9, 464–466, (Sept.l988).
M. Hatzakis, “Electron Resists for Microcircuit and Mask Production”, J.Electrotech.Soc. 116, 1033–1037, (1969).
H. Ito and C.G. Willson, ”Polymers in Electronics”, T.Davidson Editor, ACS Symposium Series 242, American Chemical Society, Washington DC, 12–13, (1984).
M. Hatzakis, KJ. Stewart, J.M. Shaw, and S.A. Rishton, ”New High-Resolution and High-Sensitivity Deep UVX-Ray, and Electron Beam Resists”7, , J.Electrochem.Soc., Vol.l38, No.4, 1076–1079, (1991).
M. Hatzakis, C.H. Ting, and N. Viswanathan, “Fundamental Aspects of Electron Beam Exposure of Polymeric Resist Systems”, Proceedings of the Symposium on Electron and Ion Beam Science and Technol., ECS Inc., Princeton, NJ, 542–579, (1974).
A.R. Neureuther, D.F. Kyser, K. Muratai and C.H. Ting, ”Electron Beam Resist Line Edge Profile Modeling”, Proceedings of the Symposium on Electron and Ion Beam Science and Technol., ECS Inc., Princeton, NJ, 265–275, (1978).
L. Haller, R Feder, M. Hatzakis, and E. Spiller, ”Copolymers of Methyl Methacrylate and Methacrylic Acid and Their Metal Salts as Radiation Sensitive Resists”, J.Electrochem. Soc. 126, No. 1, 154–161, (1979).
W. Moreau and C.H. Ting, ”High Sensitivity Positive Electron Resist”, US Patent 3, 934, 057, (1976).
M. Hatzakis, ”High Sensitivity Resist System for Lift-off Matallization”, US Patent 4, 024, 293, (1977).
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© 1994 Springer Science+Business Media Dordrecht
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Hatzakis, M. (1994). Electron Beam Resists and Pattern Transfer Methods. In: Gentili, M., Giovannella, C., Selci, S. (eds) NANOLITHOGRAPHY: A Borderland between STM, EB, IB, and X-Ray Lithographies. NATO ASI Series, vol 264. Springer, Dordrecht. https://doi.org/10.1007/978-94-015-8261-2_2
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DOI: https://doi.org/10.1007/978-94-015-8261-2_2
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