Latest Results Obtained with the Alpha Ion Projection Machine

Abstract

Ion projection lithography shows the advantage of demagnifying ion-optical mask to wafer pattern transfer with sub-0.25 urn resolution combined with large depth of focus. There is also the possibility of electronic alignment (“pattern lock”) of the projected ion image on-line during chip exposure without moving mechanical parts with nanometer precision. Due to the negligible scattering of ions in comparison to electrons there is no need for proximity corrections.

Recent results obtained with the advanced research type “Alpha Ion Projector” are:

• Electrostatic image shift under pattern lock conditions

• Resolution and exposure latitudes realized in different organic resist materials by electronic alignment techniques, demonstrated on quantum ring devices

• Silicon stencil mask technology

• Ion-optical distortion: comparison between simulation and experiment