Abstract
This paper investigate the manufacturing aspects of x-ray masks with sub-100 nm resolution obtained by medium voltage EBL and gold electroplating. To accomplish this task, commercial EBL systems, Leica Cambridge EBMF 10 /cs 120 and EBPG 5-HR were used. Although, it was demonstrated that at accelerating voltages as high as 100 KV resolution down to 75 nm is achievable in 0.75 μm thick resist, we found that similar results at sub-100 nm resolution can be obtained even at 40–50 KV in a single resist layer. Since the requirements of resolution and absorbers aspect ratio are challenging, an in-depth process study of the variables affecting the process behavior is needed. Therefore, we focus our investigation on some critical points, namely the reproducibility of the results, the effects on the ultimate resolution of the electron beam diameter and the exposure latitude. The extensive use of Monte Carlo simulation (MC) allowed the study of the scattering processes (and thus the energy deposition mechanism) occurring in the resist. In particular, the contributes from the forward and from the backscattering, could be separately computed. Dense and reproducible 65 nm gold line-width resolution x-ray mask have been fabricated at 50 kV in a 0.55 nm thick PMMA.
Access this chapter
Tax calculation will be finalised at checkout
Purchases are for personal use only
Preview
Unable to display preview. Download preview PDF.
References
H. Smith, K. Ismail, M.L. Schattemburger and D.A. Antoniadis, Microelectronic Engineering 11 (1990) 53–59.
T. Horiuchi, K. Deguchi, S. Hirota and A. Yoshikawa, Microelectronic Engineering 13(1991)315–318.
Y.C. Ku, E. Anderson, M. Schattemburger and H. Smith, J. Vac. Scie. Technol. B 6, Jan/Feb (1988).
V. White and F. Cerrina, J. Vac. Scie. Technol. B 6, 3141, 1992
M. A. McCord, R. Viswanathan, F.J. Hohn, A.D. Wilson, R. Naumann and T.H. Newman, J. Vac. Scie. Technol. B 6, 2764, 1992.
C. Kohler, W. Brunger, Ch. Ehrlich, H. Huber and K. Reimer, Proceedings of Microelectronic Engineering Conference 1992, Sept. 1992 Eerlangen, Germany.
M. Gentili, R. Kumar, L. Luciani, L. Grella, D. Plumb, Q. Leonard, J. Vac. Scie. Technol. B 9 (6), Nov/Dec 1991.
CNR-IESS Research Report, Sept. 92
R.J. Hawryluk, J. Vac. Scie. Technol. 19 (1981) 1.
M. Gentili, L. Grella, L. Luciani, M. Baciocchi, E. Di Fabrizio, BA. Wallman, Microelectronic Enginnering 14 (1991), 183–196
Author information
Authors and Affiliations
Editor information
Editors and Affiliations
Rights and permissions
Copyright information
© 1994 Springer Science+Business Media Dordrecht
About this chapter
Cite this chapter
Gentili, M. (1994). Fabrication of X-ray mask for nanolithography by EBL. In: Gentili, M., Giovannella, C., Selci, S. (eds) NANOLITHOGRAPHY: A Borderland between STM, EB, IB, and X-Ray Lithographies. NATO ASI Series, vol 264. Springer, Dordrecht. https://doi.org/10.1007/978-94-015-8261-2_14
Download citation
DOI: https://doi.org/10.1007/978-94-015-8261-2_14
Publisher Name: Springer, Dordrecht
Print ISBN: 978-90-481-4388-7
Online ISBN: 978-94-015-8261-2
eBook Packages: Springer Book Archive