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Photovoltaic Properties of Solid State Junctions of Layered Semiconductors

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Photoelectrochemistry and Photovoltaics of Layered Semiconductors

Part of the book series: Physics and Chemistry of Materials with Low-Dimensional Structures ((PCMALS,volume 14))

Abstract

This article reviews a number of Van der Waals type layered semiconductors, which have been studied as photovoltaic base materials as well as window materials in heterostructures with other layered or nonlayered semiconductors. In particular, the compounds to be discussed are: GaSe, GaTe, InSe of the III–VI, and GeS, GeSe, SnS, SnSe, SnS2, SnSe2 of the IV–VI family. Others belong to the layered transitionmetal compound series: TiS3, ZrS2, ZrS3, ZrSe2, ZrSe3 and related compounds of Hf, as well as MoS2, MoSe2, MoTe2, WS2, WSe2. Because the photovoltaic performance depends on a number of electronic and optical parameters, these properties will also be thoroughly reviewed, along with other important aspects, such as crystalgrowth and doping possibilities. Most emphasis however will be given to the chapter reviewing the photovoltaic properties achieved so far and evaluating their potential for future applications.

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  1. Dept. of Physics, University of Konstanz, P.O. Box 5560, D-7550, Konstanz, Germany

    E. Bucher

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  1. E. Bucher
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  1. Department of Materials Science and Engineering, The University of Arizona, Tucson, AZ, USA

    A. Aruchamy

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© 1992 Kluwer Academic Publishers

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Bucher, E. (1992). Photovoltaic Properties of Solid State Junctions of Layered Semiconductors. In: Aruchamy, A. (eds) Photoelectrochemistry and Photovoltaics of Layered Semiconductors. Physics and Chemistry of Materials with Low-Dimensional Structures, vol 14. Springer, Dordrecht. https://doi.org/10.1007/978-94-015-1301-2_1

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  • DOI: https://doi.org/10.1007/978-94-015-1301-2_1

  • Publisher Name: Springer, Dordrecht

  • Print ISBN: 978-90-481-4111-1

  • Online ISBN: 978-94-015-1301-2

  • eBook Packages: Springer Book Archive

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