Abstract
The selection of a PIN to perform a particular microwave switching function begins with the choice of the size of the I region — specifically, its thickness, W, and cross sectional area, A. In practice, however, this characterization is usually accomplished using the related variables junction capacitance, CJ, which depends upon both A and W, and bulk breakdown voltage, VBB, which is proportional to W. What are the basic considerations in making these selections?
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References
Hines, M.E.: “Fundamental Limitations in RF Switching and Phase Shifting Using Semiconductor Diodes,” Proceedings of the IEEE, Vol. 52, No. 6, pp. 697–708, June 1964.
ITT Reference Data for Radio Engineers — Fifth Edition; Howard W. Sams and Co. Inc., New York, 1974.
Mortenson, K.E.: “Analysis of the Temperature Rise in PIN Diodes Caused by Microwave Pulse Dissipation,” IEEE Transactions on Electron Devices, Vol. ED-13, No. 3, pp. 305–314, March 1966. Also Mortenson’s Variable Capacitance Diodes, Artech House, Dedham, Massachusetts, 1975.
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© 1982 Van Nostrand Reinhold Company
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White, J.F. (1982). Practical PIN Diodes. In: Microwave Semiconductor Engineering. Electrical/Computer Science and Engineering Series. Springer, Dordrecht. https://doi.org/10.1007/978-94-011-7065-9_3
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DOI: https://doi.org/10.1007/978-94-011-7065-9_3
Publisher Name: Springer, Dordrecht
Print ISBN: 978-94-011-7067-3
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