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Plasma Processing of Semiconductors pp 73–88Cite as

SiO2 Etching in High-Density Plasmas: Differences with Low-Density Plasmas

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Part of the book series: NATO ASI Series ((NSSE,volume 336))

Abstract

Silicon dioxide (SiO2) is the most important insulator employed in silicon integrated circuit (IC) technology. It is used as the material of choice to electrically isolate the conductive portions of devices or circuits from each other, e.g. as the gate insulator of field effect transistors, field oxide or trench refill material when isolating individual devices, and as interlevel dielectric which isolates the metallic interconnections between individual devices from each other.[1] State-of-the-art ICs employ up to 5 metal wiring levels at this time, and the use of up to 8 levels of metal is projected within several years. The wiring is imbedded in an equal number of deposited and subsequently patterned SiO2 films.

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Authors and Affiliations

  1. Department of Physics , University at Albany, State University of New York, 1400 Washington Avenue, Albany, NY, 12222, USA

    G. S. Oehrlein

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  1. G. S. Oehrlein
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Editors and Affiliations

  1. Department of Electrical Engineering, University of Nebraska-Lincoln, Lincoln, Nebraska, USA

    P. F. Williams

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© 1997 Springer Science+Business Media Dordrecht

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Oehrlein, G.S. (1997). SiO2 Etching in High-Density Plasmas: Differences with Low-Density Plasmas. In: Williams, P.F. (eds) Plasma Processing of Semiconductors. NATO ASI Series, vol 336. Springer, Dordrecht. https://doi.org/10.1007/978-94-011-5884-8_4

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  • DOI: https://doi.org/10.1007/978-94-011-5884-8_4

  • Publisher Name: Springer, Dordrecht

  • Print ISBN: 978-94-010-6486-6

  • Online ISBN: 978-94-011-5884-8

  • eBook Packages: Springer Book Archive

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