Abstract
This paper is an overview of material issues in connection with the design and the fabrication of new heterostructure devices operating at terahertz frequency. Notably, I will discuss in terms of frequency and power capabilities the advantages afforded by the shrinking in dimension and by the possibility to temporarily confine the charge carriers and to transfer them by tunnelling. In this context, special attention will be devoted to recent progress in strained layers pseudomorphically grown on GaAs or InP substrate. Finally, selected recent achievements dealing with the Single Barrier Varactor and the resonant tunnelling diode will be reported.
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© 1997 Kluwer Academic Publishers
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Lippens, D. (1997). Material Issues for New Devices. In: Chamberlain, J.M., Miles, R.E. (eds) New Directions in Terahertz Technology. NATO ASI Series, vol 334. Springer, Dordrecht. https://doi.org/10.1007/978-94-011-5760-5_15
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DOI: https://doi.org/10.1007/978-94-011-5760-5_15
Publisher Name: Springer, Dordrecht
Print ISBN: 978-0-7923-4537-4
Online ISBN: 978-94-011-5760-5
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