Abstract
The conversion of low frequency noise into phase noise in a high frequency oscillator depends strongly on the active device type and operating conditions. Experimental setups are presented to achieve the best choice of a transistor to be used in low noise oscillators and to study the correlation between phase noise and low frequency noise. Results obtained with the classical linear approach for the design of a microwave oscillator are discussed. Then the advantages of the nonlinear simulation approach are described, together with the model-related inaccuracies that are responsible of unacceptable calculated phase noise values in special biasing conditions.
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Llopis, O., Verdier, J., Regis, M., Plana, R., Gayral, M., Graffeuil, J. (1997). Correlation Between Microwave Transistors Low Frequency Noise, Amplifiers Residual Phase Noise and Oscillators Phase Noise Consequences On Oscillator Phase Noise Modeling. In: Groll, H., Nedkov, I. (eds) Microwave Physics and Techniques. NATO ASI Series, vol 33. Springer, Dordrecht. https://doi.org/10.1007/978-94-011-5540-3_3
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DOI: https://doi.org/10.1007/978-94-011-5540-3_3
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