Abstract
The quantum mechanical phenomenon of electron tunneling was used for the imaging of a conducting surface in atomic scale in 1982 when the first scanning tunneling microscope was built [1]. The most important feature of scanning tunneling microscopy (STM) is the real-space visualization of the surfaces of metals and semiconductors in atomic scale. The tunneling current decreases exponentially with increasing the tip-sample distance. This makes it possible to visualize surface structures with sub-angstrom resolution and detect various atomic-scale defects inaccessible by diffraction and spectroscopic techniques [2–4]. An atomic force microscope was invented to enable the detection of atomic-scale features of insulating surfaces [5]. In atomic force microscopy (AFM) the repulsive force between the tip (located at the end of a cantilever) and sample is commonly measured on the basis of the cantilever deflection. Because the repulsive force is universal, AFM is applicable to conducting as well as insulating materials.
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Whangbo, MH., Ren, J., Magonov, S.N., Bengel, H. (1999). Analysis of Scanning Tunneling and Atomic Force Microscopy Images. In: Boswell, F.W., Bennett, J.C. (eds) Advances in the Crystallographic and Microstructural Analysis of Charge Density Wave Modulated Crystals. Physics and Chemistry of Materials with Low-Dimensional Structures, vol 22. Springer, Dordrecht. https://doi.org/10.1007/978-94-011-4603-6_6
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DOI: https://doi.org/10.1007/978-94-011-4603-6_6
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