Morphology Formation in Silicon-Based Thin Amorphous Films as Self-Organization Manifestation

Abstract

Standard scheme of the semiconductor material research includes an atomic structure studies as an link between the preparation condition and macroscopic properties of the materials. For quantitative investigations the atomic structure is often identified with the short-range and medium-range order (SRO and MRO) parameters. This approach was very successful with respect to single crystal investigation due to translation symmetry of the material structure. In the disordered semiconductors the SRO and MRO parameters are also played an important role in the material properties formation, but because the long-range ordering absence. From the other hand the structural parameters aren’t usually influenced strongly by the preparation condition variation, whereas the optical and electrical properties of the materials could be differed dramatically. This circumstance points out to the some hidden structural parameters existence in the disordered semiconductors.