Abstract
Cross conductance characteristics of a hot-spot transistor was presented. The observed nonlinearity was attributed to the reabsorption of non-equilibrium phonons emitted in the contact region by the injected electrons in the channels [1]. The temperature due to electron heating is proportional to the applied bias, T ∝ V, which results in a substantial increase of the resistance in both channels. Acoustic coupling to the substrate was avoided by fabricating the devices as free-standing. The agreement with the theory is excellent.
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Ellialtioğlu, R., Kaya, İ.İ. (2000). Conductance in Metallic Submicron Cross-Junctions. In: Kulik, I.O., Ellialtioğlu, R. (eds) Quantum Mesoscopic Phenomena and Mesoscopic Devices in Microelectronics. NATO Science Series, vol 559. Springer, Dordrecht. https://doi.org/10.1007/978-94-011-4327-1_33
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DOI: https://doi.org/10.1007/978-94-011-4327-1_33
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