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Structural and Electrical Properties of Silicon on Isolator Structures Manufactured on FZ- and CZ-Silicon by Smart-Cut Technology

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Perspectives, Science and Technologies for Novel Silicon on Insulator Devices

Part of the book series: NATO Science Series ((ASHT,volume 73))

Abstract

The evolution of the structural and electrically active defects during SOI fabrication by the Smart-Cut technology was investigated. The important roles of hydrogen and boron concentrations in the defects observed in the top layer of SOI structures are shown.

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References

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Author information

Authors and Affiliations

  1. Institute of Semiconductor Physics, RAS, 630090, Lavrentieva 13, Novosibirsk, Russia

    V. P. Popov, I. V. Antonova, V. F. Stas, L. V. Mironova, E. P. Neustroev, A. Gutakovskii, A. A. Franzusov & G. N. Feofanov

Authors
  1. V. P. Popov
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  2. I. V. Antonova
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  3. V. F. Stas
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  4. L. V. Mironova
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  5. E. P. Neustroev
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  6. A. Gutakovskii
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  7. A. A. Franzusov
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  8. G. N. Feofanov
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Editor information

Editors and Affiliations

  1. University of Surrey, Guildford, Surrey, UK

    Peter L. F. Hemment

  2. Institute of Semiconductor Physics, Kyiv, Ukraine

    V. S. Lysenko  & A. N. Nazarov  & 

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© 2000 Springer Science+Business Media Dordrecht

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Popov, V.P. et al. (2000). Structural and Electrical Properties of Silicon on Isolator Structures Manufactured on FZ- and CZ-Silicon by Smart-Cut Technology. In: Hemment, P.L.F., Lysenko, V.S., Nazarov, A.N. (eds) Perspectives, Science and Technologies for Novel Silicon on Insulator Devices. NATO Science Series, vol 73. Springer, Dordrecht. https://doi.org/10.1007/978-94-011-4261-8_4

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  • DOI: https://doi.org/10.1007/978-94-011-4261-8_4

  • Publisher Name: Springer, Dordrecht

  • Print ISBN: 978-0-7923-6117-6

  • Online ISBN: 978-94-011-4261-8

  • eBook Packages: Springer Book Archive

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