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Grain Boundary and High-Temperature Strength in SiC

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Silicon Carbide Ceramics—1

Abstract

The nature of grain boundaries in pressureless sintered SiC with and without sintering aids is presented in connection with the absence and presence of strength loss at high temperatures. The absence of strength loss may be attributed to the occurrence of an ‘extended grain boundary’, whereas the remarkable loss in strength is due to the existence of an amorphous-like second phase at the grain boundaries. This extended grain boundary is not of a special phase but simply of a relaxed structure with some extension, and is most likely composed mainly of SiC itself It is shown that the concept of extended grain boundaries can explain the observed behaviour in SiC.

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Authors
  1. Hiroaki Kurishita
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  2. Hideo Yoshinaga
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  3. Yuichi Ikuhara
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Editor information

Editors and Affiliations

  1. The Nishi Tokyo University, Japan

    Shigeyuki Sömiya (Professor and Professor Emeritus) (Professor and Professor Emeritus)

  2. Tokyo Institute of Technology, Japan

    Shigeyuki Sömiya (Professor and Professor Emeritus) (Professor and Professor Emeritus)

  3. National Institute for Research in Inorganic Materials, Tsukuba, Japan

    Yoshizo Inomata

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© 1991 Elsevier Science Publishers Ltd

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Kurishita, H., Yoshinaga, H., Ikuhara, Y. (1991). Grain Boundary and High-Temperature Strength in SiC. In: Sömiya, S., Inomata, Y. (eds) Silicon Carbide Ceramics—1. Springer, Dordrecht. https://doi.org/10.1007/978-94-011-3842-0_9

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  • DOI: https://doi.org/10.1007/978-94-011-3842-0_9

  • Publisher Name: Springer, Dordrecht

  • Print ISBN: 978-1-85166-560-0

  • Online ISBN: 978-94-011-3842-0

  • eBook Packages: Springer Book Archive

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