Abstract
Sintering behavior and sintering techniques of silicon carbide are reviewed. Work on sintering experiments with silicon carbide containing B-C and Al-B-C is referred to. First, the driving energy of sintering, the non-sinterability of silicon carbide powder, and the role of additives are explained by the free energy theory of mass transport. Second, silicon carbide sintering techniques are reported. In the case of B-C addition, it is emphasized that optimization of added B content, sintering atmosphere and heating rate are important factors controlling the density of the sintered SiC. Sinterability of Al-doped SiC powder and sintering by the addition of Al2O3, Al-C, Al-B-C and other compounds are summarized.
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© 1991 Elsevier Science Publishers Ltd
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Tanaka, H. (1991). Sintering of Silicon Carbide. In: Sömiya, S., Inomata, Y. (eds) Silicon Carbide Ceramics—1. Springer, Dordrecht. https://doi.org/10.1007/978-94-011-3842-0_10
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DOI: https://doi.org/10.1007/978-94-011-3842-0_10
Publisher Name: Springer, Dordrecht
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