Abstract
The effect of emitter-base coupling between the excess carrier concentrations at the junction during open-circuit voltage decay in a n*-p silicon solar cell when including recombination processes in both emitter and base under low or high injection condition, is considered. A general resolution of the continuity differential equation is performed and manageable expressions of minority carrier densities, for any cell structure, are derived. The theory yields a description of time variation of the junction voltage at the very beginning of the OCVD. Measurements of carrier lifetimes with the OCVD method have to take into account this result.
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© 1991 Springer Science+Business Media Dordrecht
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Pelanchon, F., Boeglin, E., Mialhe, P. (1991). Emitter-Base Coupling in Highly Illuminated Solar Cells and Applications in OCVD Technique. In: Luque, A., Sala, G., Palz, W., Dos Santos, G., Helm, P. (eds) Tenth E.C. Photovoltaic Solar Energy Conference. Springer, Dordrecht. https://doi.org/10.1007/978-94-011-3622-8_8
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DOI: https://doi.org/10.1007/978-94-011-3622-8_8
Publisher Name: Springer, Dordrecht
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