Abstract
We present our microscopic calculations for mechanisms of oxidation of silicon. The results provide us with characteristic features in the oxidation of covalent materials: metastability in oxygen adsorption on the surface, oxygen penetration and bond formation in the silicon substrate, the resulting expansion in volume, and significant relaxation at the highly mismatched Si/SiO2 interface.
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References
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© 1992 Springer Science+Business Media Dordrecht
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Oshiyama, A., Miyamoto, Y. (1992). Initial Stage of Oxidation of Silicon: A State-of-the-Art Calculation. In: Aoki, H., Tsukada, M., Schlüter, M., Lévy, F. (eds) New Horizons in Low-Dimensional Electron Systems. Physics and Chemistry of Materials with Low-Dimensional Structures, vol 13. Springer, Dordrecht. https://doi.org/10.1007/978-94-011-3190-2_22
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DOI: https://doi.org/10.1007/978-94-011-3190-2_22
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