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Electrical Characteristics of PECVD Silicon Nitride / Compound Semiconductor Interfaces for Optoelectronic Device Passivation

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Crucial Issues in Semiconductor Materials and Processing Technologies

Part of the book series: NATO ASI Series ((NSSE,volume 222))

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Abstract

The interface state density and fixed charge of plasma enhanced chemical vapour deposited SiNx / compound semiconductor interfaces are reported for several values of the insulator deposition parameters. The semiconductor substrata were bulk silicon, epitaxial InGaAs and InGaAsP. The effects of a thermal annealing in nitrogen were also shown. The experimental data can be interpreted in terms of the contributions of insulator-related structural defects and semiconductor-related defects induced by the plasma deposition process on the crystal surface.

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References

  1. Bagnoli P.E., Piccirillo A., Gobbi A.L., Giannetti R., (1991) ‘Electrical Characteristics of Silicon Nitride on Silicon and InGaAs as a Function of the Insulator Stoichiometry’, to be published on Applied Surface Science

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  2. Robertson J., Powell M.J. (1984), ‘Gap States in Silicon Nitride’, Appl. Phys. Lett. 44, 415–417

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  3. Piccirillo A., Gobbi A.L. (1990), ‘Physical-Electrical Properties of Silicon Nitride Deposited by PECVD on III-V Semiconductors’, J. Electrochem. Soc.12, 3910–3917

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  4. Hasegawa H., Sadawa T. (1983) ‘On the Electrical Properties of Compound Semiconductor Interfaces in Metal / Insulator / Semiconductor Structures and the Possible Origin of Interface States’, Thin Solid Films, 103, 119–140

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Author information

Authors and Affiliations

  1. Centro Studi e Laboratori di Telecomunicazioni CSELT, via Reiss Romoli 274, Torino, Italy

    A. Piccirillo

  2. Dipartimento di Ingegneria dell’Informazione, Universita’ di Pisa, via Diotisalvi 2, Pisa, Italy

    P.E. Bagnoli

Authors
  1. A. Piccirillo
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  2. P.E. Bagnoli
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Editor information

Editors and Affiliations

  1. Physics Department, University of Catania, Catania, Italy

    S. Coffa , F. Priolo  & E. Rimini ,  & 

  2. AT&T Bell Laboratories, Murray Hill, New Jersey, USA

    J. M. Poate

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© 1992 Springer Science+Business Media Dordrecht

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Piccirillo, A., Bagnoli, P. (1992). Electrical Characteristics of PECVD Silicon Nitride / Compound Semiconductor Interfaces for Optoelectronic Device Passivation. In: Coffa, S., Priolo, F., Rimini, E., Poate, J.M. (eds) Crucial Issues in Semiconductor Materials and Processing Technologies. NATO ASI Series, vol 222. Springer, Dordrecht. https://doi.org/10.1007/978-94-011-2714-1_9

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  • DOI: https://doi.org/10.1007/978-94-011-2714-1_9

  • Publisher Name: Springer, Dordrecht

  • Print ISBN: 978-94-010-5203-0

  • Online ISBN: 978-94-011-2714-1

  • eBook Packages: Springer Book Archive

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