Abstract
Electron paramagnetic resonance (EPR) has been used to investigate the damage produced by implanting (100) silicon wafers with either 2MeV Si+ ions or 3MeV Au+ ions at liquid nitrogen (LN) temperatures. The EPR spectra include those of the neutral 4-vacancy (Si-P3), the silicon di-interstitial (Si-P6), the amorphous silicon D-centre and a broad anisotropic ∑ resonance; their concentration is determined as a function of dose in the range 1013 to 1015 Si+ cm-2 and 1012 to 1014 Au+ cm-2. The EPR spectrum for any dose of Au+ ions is very similar to the equivalent spectrum for an approximately 20 times larger dose of Si+ ions.
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© 1992 Springer Science+Business Media Dordrecht
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Sealy, L.T., Barklie, R.C. (1992). EPR Study of Defects Produced by Mev Ion Implantation Into Silicon. In: Coffa, S., Priolo, F., Rimini, E., Poate, J.M. (eds) Crucial Issues in Semiconductor Materials and Processing Technologies. NATO ASI Series, vol 222. Springer, Dordrecht. https://doi.org/10.1007/978-94-011-2714-1_44
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DOI: https://doi.org/10.1007/978-94-011-2714-1_44
Publisher Name: Springer, Dordrecht
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