Abstract
Reactions of Ti and Co films with germanium and silicon/germanium alloys using rapid thermal annealing (RTA) have been investigated for applications in advanced MOSFET processes. Studies were performed using four-point probe, Auger electron spectroscopy (AES) and cross sectional transmission electron microscopy (XTEM). Samples were annealed in either Ar or N2 in order to observe the effect of RTA ambient on germanide formation. The formation of germanides occurs similarly to the formation of corresponding silicides. Resistivities of 20 – 35 μΩ-cm have been obtained at RTA temperatures below 900 °C.
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References
Murarka, S.P., Reed, M.H., Doherty, C.J. and Fraser, D.B. (1982), J. Electrochem. Soc., Vol. 129 No. 2, 293–301.
Ting, C.Y. and Wittmer, M. (1983), J. Appl. Phys., 54(2), 937–943.
Baccarani, G., Wordeman, M.R. and Dennard, R.H. (1984), IEEE Trans. Elec. Dev., Vol ED-31 No. 4, 452–462.
Chen, D.C., Cass, T.R., Turner, J.E., Merchant, P.P. and Chio, K.Y. (1986), IEEE Trans. on Elec. Dev., Vol. ED-33 No. 10, 1463–1469.
Öztürk, M.C., Grider, D.T., Ashburn, S.P., Sanganeria, M. and Wortman, J.J. (1991), presented at Spring 1991 MRS meeting, Anaheim, CA.
Daemblees, H., Herzog, H., Jorke, H., Kibbel, H. and Kaspar, E. (1986), IEEE Transactions on Electron Devices, Vol. ED-33, 633.
Taylor, G.W. and Simmons, J.G. (1985), IEEE Trans. on Elec. Devices, Vol. ED-32, 2345.
Iyer, S.S., Patton, G.L., Stork, J.M.C., Meyerson, B.S. and Horame, D.L. (1989), IEEE Trans. on Elec. Dev., Vol. 36, 2043.
Öztürk, M.C., Zhong, Y., Grider, D.T., Sanganeria, M., Wortman, J.J. and Littlejohn, M.A. (1990), SPIE proceedings on Rapid Thermal and Related Processing Techniques, Vol. 1393, Santa Clara, CA.
Grider, D.T., Öztürk, M.C., Sanganeria, M. and Wortman, J.J. (1991), presented at 33rd Electronic Materials Conference, Boulder, CO.
öztürk, M.C., Grider, D.T., Wortman, J.J., Littlejohn, M.A. and Zhong, Y. (1990), Journ. of Electronic Materials, Vol. 19, 1129.
Van Den Hove, L. (1988), Ph.D. Diss., Kathulieke Universities Leuven, Belguim.
Rosser, P. J. and Tomkins, G.J., (1985), Mat. Res. Soc. Symp. Proc., Vol. 35, 457–464.
Merchant, P. and Amano, J., (1984), Journal of Vacuum Science Technology, Vol. B 2(4), P. 762.
Gmelin, L., (1961), Handbook of Inorganic Chemistry, Cobalt, Chemie, Weinheim, Germany, Vol. A, p. 511.
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© 1992 Springer Science+Business Media Dordrecht
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Ashburn, S.P., Öztürk, M.C. (1992). Formation of Germanides by Rapid Thermal Annealing and their Applications in Advanced Mosfet Processes. In: Coffa, S., Priolo, F., Rimini, E., Poate, J.M. (eds) Crucial Issues in Semiconductor Materials and Processing Technologies. NATO ASI Series, vol 222. Springer, Dordrecht. https://doi.org/10.1007/978-94-011-2714-1_37
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DOI: https://doi.org/10.1007/978-94-011-2714-1_37
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