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Materials aspects and implementation of silicides for ULSI

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Crucial Issues in Semiconductor Materials and Processing Technologies

Part of the book series: NATO ASI Series ((NSSE,volume 222))

Abstract

Silicides have been a topic of intensive research for more than a decade. Driving force for these investigations has been certainly the interesting materials aspects of the silicides and the possibility of their application in integrated circuits. An extensive review of the materials properties of silicides is given in ref.1. The most interesting group of silicides in view of this paper are the transition metal silicides. Experiments have been performed to understand the silicidation reaction, its stability with respect to dopants, chemical ambient and temperature, and to conceive kinetic and thermodynamic characteristics. The resulting fundamental understanding has been crucial for implementation of silicides in integrated circuits.

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Author information

Authors and Affiliations

  1. Interuniversity Microelectronics Center (IMEC v.z.w.), Kapeldreef 75, 3001, Leaven, Belgium

    Karen Maex

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  1. Karen Maex
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Editors and Affiliations

  1. Physics Department, University of Catania, Catania, Italy

    S. Coffa , F. Priolo  & E. Rimini ,  & 

  2. AT&T Bell Laboratories, Murray Hill, New Jersey, USA

    J. M. Poate

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Maex, K. (1992). Materials aspects and implementation of silicides for ULSI. In: Coffa, S., Priolo, F., Rimini, E., Poate, J.M. (eds) Crucial Issues in Semiconductor Materials and Processing Technologies. NATO ASI Series, vol 222. Springer, Dordrecht. https://doi.org/10.1007/978-94-011-2714-1_34

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  • DOI: https://doi.org/10.1007/978-94-011-2714-1_34

  • Publisher Name: Springer, Dordrecht

  • Print ISBN: 978-94-010-5203-0

  • Online ISBN: 978-94-011-2714-1

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