Abstract
The manufacture of state-of-the-art integrated circuits uses UV optical projection lithography. Whether this technology will take the industry to quarter-micrometer minimum feature sizes and below is currently a subject of intense debate. In this paper we argue that proximity x-ray lithography is better matched to the “system problem” of lithography and for this reason offers the most cost-effective path to ultra-large-scale integrated circuits with feature sizes of one tenth micrometer and below (i.e., gigascale electronics and quantum-effect electronics).
Access this chapter
Tax calculation will be finalised at checkout
Purchases are for personal use only
Preview
Unable to display preview. Download preview PDF.
References
Bjorkholm, J.E., Bokor, J., Eichner, L., Freeman, R.R., Gregus, J., Jewell, T.E., Mansfield, W.M., MacDowell, A.A., Raab, E.L., Silfvast, W.T., Szeto, L.H., Tennant, D.M., Waskiewicz, W.K., White, D.L., Windt, D.L., Wood, O.R., and Bruning, J.H. (1990) ‘Reduction Imaging at 14 nm using Multilayer-Coated Optics: Printing of Features Smaller than 0.1 μm’, J. Vac. Sci. Technol. B 8, 1509–1513.
Moel, A., Schattenburg, M.L., Carter, J.M., and Smith, H.I. (1990) ‘A Compact Low-Cost System for Sub-100nm X-ray Lithography’, J. Vac. Sci. Technol. B 8, 1648–1651.
Ogawa, T., Mochiji, K., Soda, Y., Kimura, T. (1989) ‘The Effects of Secondary Electrons from A Silicon Substrate on SR X-ray Lithography’, Japan J. Appl. Phys. Series 3, 120–123.
Early, K., Schattenburg, M.L., and Smith, H.I. (1990) ‘Absence of Resolution Degradation in X-ray Lithography for λ from 4.5 nm to 0.83 nm’, Microelectronic Engineering 11, 317–321.
Deguchi, K., Ishiyama, T., Horiuchi, T., and Yoshikawa, A. (1990) ‘Effects of Photo-and Auger Electron Scattering on Resolution and Linewidth Control in SR Lithography’, Japan J. Appl. Phys. Series 4, 100–140.
Lin, B.J. (1990)’ A New Perspective on Proximity Printing: From Ultraviolet to X-ray’, J. Vac. Sci. Technol. B 8, 1539–1546.
Guo, J.Z.Y., Chen, G., White, V., Anderson, P., and Cerrina, F. (1990) ‘Aerial Image Formation in Synchrotron Radiation-Based X-ray Lithography: The Whole Picture’, J. Vac. Sci. Technol. B 8, 1551–1556.
Schattenburg, M.L., Li, K., Shin, R.T., Kong, J.A., and Smith, H.I. (1991) ‘Electromagnetic Calculation of Soft-X-ray Diffraction from 0.1 μm-scale Gold Structures’, J. Vac. Sci. Technol. B, Nov/Dec 1991.
Chu, W., Smith, H.I., and Schattenburg, M.L. (1991) ‘Replication of 50 nm Linewidth Device Patterns using Proximity X-ray Lithography at Large Gaps’, Appl. Phys. Lett. 59, 1641–1643.
Early, K., Schattenbrug, M.L., Olster, D.B., Shepard, M.I., and Smith, H.I. (1991) ‘Diffraction in X-ray Proximity Printing: Comparing Theory and Experiment for Gratings, Lines, and Spaces’, Microelectronic Engineering (in press).
Moel, A., Chu, W., Early, K., Ku, Y.-C., Moon, E.E., Schattenburg, Tsai, F., Griffith, F.W., Haas, L.E., Fung, C.D., and Smith, H.I. (1991) ‘Fabrication and Characterization of High-Flatness Mesa-Etched Silicon Nitride X-ray Masks’, J. Vac. Sci. Technol. B, Nov/Dec 1991.
Wilson, A.D., Lapadula, C., Silverman, J.P., Viswanathan, R., Voelker, H., and Fair, R. (1989) ‘Control of Fixturing-Induced Distortion in X-ray Masks’, Vac. Sci. Technol. B 7, 1705–1708.
Lenius, P., Engelstad, R., Palmer, S., Brodsky, E., and Cerrina, F. (1990) ‘Mechanical Distortions of Support Frames for X-ray Lithography Masks’, J. Vac. Sci. Technol. B 8, 1570–1574.
Laird, D.L., and Engelstad, R.L. (1991) ‘Optimal Design of an X-ray Lithgoraphy Mask’, Vac. Sci. Technol. B Nov/Dec 1991.
Taniguchi, M., Funastsu, R., Inagaki, A., Okamoto, K., Kenbo, Y., Kato, Y., and Ochiai, I. in Electron-Beam, X-ray, and Ion-Beam Technology: Submicrometer Lithographies VIII, ed. A. Yanof (SPIE, Bellingham, WA1989) Vol. 1089, p. 240–251.
Oizumi, H., Iijima, S., and Mochiji, K. (1990) ‘Influence of Oxygen Upon Radiation Durability of SiN X-ray Mask Membranes’, Japan J. Appl. Phys. Series 4, 82–85.
Oda, M., Ozawa, A., Ohki, S., and Yoshihara, H. (1990) ‘Ta Film Properties for X-ray Mask Absorbers’, Japan J. Appl. Phys. Series 4, 96–99.
Oda, M., Ohkubo, T., Ozawa, A., Ohki, S., Kakuchi, M., and Yoshihara, H. (1990) ‘An X-ray Mask using SiC Membrane Deposited by ECR Plasma CVD’, Microelectronic Engineering 11, 241–244.
Sugawara, M., Kobayashi, M., Yamaguchi, Y. (1989)’ Stress-Free and Amorphous Ta4B or Ta8SiB Absorbers for X-ray Masks’, J. Vac. Sci. Technol. B 7, 1561–1564.
Lüthje, H., Harms, M., Matthiessen, B., and Bruns, A. (1989) ‘X-ray Lithography: Novel Fabrication Process for SiC/W Steppermasks’, Japan J. Appl. Phys. Series 3, 79–84.
Mitoh, M., Hori, M., Nadahara, S., and Mori, I. (1989) ‘Fabrication of an Ultra Low Stress Tungsten Absorber for X-ray Masks’, Japan J. Appl. Phys. Series 3, 85–88.
Ohta, T., Kawazu, Y., and Yamashita, Y. (1990) ‘Fabrication of X-ray Masks using W-CVD for Forming Absorber Pattern’, Japan J. Appl. Phys. Series 4, 78–81.
Ku, Y.-C., Smith, H.I., and Plotnik, I. (1990) ‘Low Stress Tungsten Absorber for X-ray Masks’, Microelectronic Engineering 11, 303–308.
Ku, Y.-C, Ng, L.P., Carpenter, R., Lu, K., Smith, H.I., Haas, L.E., and Plotnik, I. (1991) ‘In-Situ Stress Monitoring and Deposition of Zero Stress W for X-ray Masks’, J. Vac. Sci. Technol. B Nov/Dec 1991.
Kishimoto, A., Kuniyoshi, S., Saito, N., Soga, T., Mochiji, K., and Kimura, T. (1990) ‘Minimization of X-ray Mask Distortion by Two-Dimensional Finite Element Method Simulation’, Japan J. Appl. Phys. Series 4, 92–95.
Suzuki, K. (1989) ‘X-ray Mask Technology’, Japan J. Appl. Phys. Series 3, 76–78.
Umbach, C.P., and Broers, A.N. (1990) ‘Experimental Determination of the Proximity Effect from 25 to 100 keV in Electron Beam Patterned X-ray Masks’, J. Vac. Sci. Technol. B 8, 1614–1617.
Chu, W., Yen, A., Ismail, K., Shepard, M.I., Lezec, H.J., Musil, C.R., Melngailis, J., Ku, Y.-C, Carter, J.M., and Smith, H.I. (1989) ‘Sub-100 nm X-ray Mask Technology using Focused Ion Beam Lithography’, J. Vac. Sci. Technol. B 7, 1583–1585.
Chu, W., Rishton, S.A., Schattenburg, M.L., Kern, D.P., and Smith, H.J. (1992) ‘Fabrication of 50 nm Line-and-Space X-ray Masks in Thick Au using a 50 keV Electron Beam System’, J. Vac. Sci. Technol. B, Jan/Feb 92.
Anderson, E.H., Boegli, V., Schattenburg, M.L., Kern, D., and Smith, H.J. (1991) ‘Metrology of Electron Beam Lithography Systems using Holographically Produced Reference Samples’, J. Vac. Sci. Technol. B, Nov/Dec 91.
Smith, H.I., Hector, S.D., Schattenbrug, M.L., and Anderson, E.H. (1991) ‘A new Approach to High Fidelity E-beam Lithography Based On An In-Situ Global Fiducial Grid’, J. Vac. Sci. Technol. B, Nov/Dec 1991.
Ishihara, S., Kanai, M., Une, A., and Suzuki, M. (1989) ‘A Vertical Stepper for Synchrotion X-ray Lithography’, J. Vac. Sci. Technol. B 7, 1652–1656.
Suzuki, M., and Une, A. (1989) ‘An Optical-Heterodyne Alignment Technique for Quarter-Micron X-ray Lithography’, J. Vac. Sci. Technol. B 7, 1971–1976.
Hara, K., Uchida, Y., Nomura, T., Kimura, S., Sugemoto, D., Yoshida, A., Miyake, H., Lida, T., and Hattori, S. (1989) ‘An Alignment Technique using Diffracted Moire Signals’, J. Vac. Sci. Technol. B 7, 1977–1979.
Tabata, M. and Tojo, T, (1989) ‘High-Precision Interferometric Alignment using Checker Grating’, J. Vac. Sci. Technol. B 7, 1980–1983.
Chen, G., and Cerrina, F. (1989) ‘X-ray Lithography Two-State Alignment System’, J. Vac. Sci. Technol. B 7, 1995–1999.
G. Chen, J. Wallace, F. Cerrina, S. Palmer, and J. Randall (1991) ‘Experimental Evaluation of the Two-State Asignment System’, J. Vac. Sci. Technol. B, Nov/Dec 1991.
Kuniyoshi, S., Fujimito, K., and Kimura, T. (1989) ‘New Evaluation Approach of Alignment Signal from Resist-coated Patterns’, Japan J. Appl. Phys. Series 3, 124–129.
Oshida, Y. (1989) ‘Optical Lithography for 0.5 to 0.3 μm LSI’, Japan J. Appl. Phys. Series 3, 15–21.
Magome, N., Ota, K., and Nishi, K. (1990) ‘New Alignment Sensors for Optical Lithography’, Japan J. Appl. Phys. Series 4, 32–38.
Schattenburg, M.L., Tanaka, I., and Smith, H.I. (1987) ‘Microgap X-ray Nanolithography’, Microelectronic Engineering 6, 273–279.
Schattenburg, M.L., Early, K., Ku, Y.-C, Chu, W., Shepard, M.I., The, S.C., Smith, H.I., Peters, D.W., Frankel, R.D., Kelly, D.R., and Drumheller, J.P. (1990) ‘Fabrication and Testing of 0.1 μm Linewidth Microgap X-ray Masks’, J. Sci. Technol. B 8, 1604–1608.
SPIE 1991 Symposium on Microlithography, San Jose, 3-8 March 1991 (in press).
Wagner, A., Levin, J.P., Mauer, J.L., Blauner, P.G., Kirch, S.J., and Longo, P. (1990) ‘X-ray Mask Repair With Focsued Ion Beams’, J. Vac. Sci. Technol. B 8, 1557–1565.
Author information
Authors and Affiliations
Editor information
Editors and Affiliations
Rights and permissions
Copyright information
© 1992 Springer Science+Business Media Dordrecht
About this chapter
Cite this chapter
Smith, H.I., Schattenburg, M.L. (1992). Lithography for Manufacturing at 0.25 Micrometer and Below. In: Coffa, S., Priolo, F., Rimini, E., Poate, J.M. (eds) Crucial Issues in Semiconductor Materials and Processing Technologies. NATO ASI Series, vol 222. Springer, Dordrecht. https://doi.org/10.1007/978-94-011-2714-1_16
Download citation
DOI: https://doi.org/10.1007/978-94-011-2714-1_16
Publisher Name: Springer, Dordrecht
Print ISBN: 978-94-010-5203-0
Online ISBN: 978-94-011-2714-1
eBook Packages: Springer Book Archive