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Theory of Atomic-Scale Processes during Epitaxial Growth: Current Status

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Semiconductor Interfaces at the Sub-Nanometer Scale

Part of the book series: NATO ASI Series ((NSSE,volume 243))

Abstract

Recent progress in the atomic-scale modelling of epitaxial growth is reviewed. The various techniques that are available and their strengths and limitations are described, along with representative results that have been obtained with these methods. The techniques covered include molecular dynamics and Monte Carlo simulations, and analytic and numerical studies of continuum equations of motion

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Author information

Authors and Affiliations

  1. The Blackett Laboratory, Imperial College, London, SW7 2BZ, UK

    Dimitri D. Vvedensky

Authors
  1. Dimitri D. Vvedensky
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Editor information

Editors and Affiliations

  1. IBM Research Division, Zurich Research Laboratory, Rüschlikon, Switzerland

    H. W. M. Salemink

  2. Philips Laboratories, Briarcliff Manor, New York, USA

    M. D. Pashley

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© 1993 Springer Science+Business Media Dordrecht

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Vvedensky, D.D. (1993). Theory of Atomic-Scale Processes during Epitaxial Growth: Current Status. In: Salemink, H.W.M., Pashley, M.D. (eds) Semiconductor Interfaces at the Sub-Nanometer Scale. NATO ASI Series, vol 243. Springer, Dordrecht. https://doi.org/10.1007/978-94-011-2034-0_5

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  • DOI: https://doi.org/10.1007/978-94-011-2034-0_5

  • Publisher Name: Springer, Dordrecht

  • Print ISBN: 978-94-010-4900-9

  • Online ISBN: 978-94-011-2034-0

  • eBook Packages: Springer Book Archive

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