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Atomic-Scale View of Epitaxial Layers with Cross-Sectional Scanning Tunneling Microscopy

  • M. B. Johnson
  • U. Maier
  • H. P. Meier
  • H. Salemink
  • E. T. Yu
  • S. S. Iyer
Chapter
Part of the NATO ASI Series book series (NSSE, volume 243)

Abstract

This paper reports recent advances in the application of cross-sectional scanning tunneling microscopy and spectroscopy on semiconductor multilayer structures. The ability of this technique to obtain crystallographic, elemental, and electronic information on the atomic and near-atomic scale in such structures is demonstrated. In particular, for III-V multilayers we present atomically resolved topographic scans across AlGaAs layers that directly show interface roughness, alloy fluctuations with ordering, sensitivity to alloy composition, and the qualitative variation of electronic band structure. For group-IV materials spectroscopic measurements on Si p-n junctions show a clear transition between p- and n-type Si, with a spatial resolution of better than 10 nm. Measurements on Si/SiGe superlattices show clear topographic contrast between Si and SiGe layers, and across the superlattice, both band-edge discontinuities and band-bending are observed using spectroscopy

Keywords

Scanning Tunneling Microscope Scanning Tunneling Microscope Image SiGe Layer Sample Voltage Scanning Tunneling Microscope Measurement 
These keywords were added by machine and not by the authors. This process is experimental and the keywords may be updated as the learning algorithm improves.

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Copyright information

© Springer Science+Business Media Dordrecht 1993

Authors and Affiliations

  • M. B. Johnson
    • 1
  • U. Maier
    • 1
  • H. P. Meier
    • 1
  • H. Salemink
    • 1
  • E. T. Yu
    • 2
  • S. S. Iyer
    • 2
  1. 1.IBM Research DivisionZurich Research LaboratoryRüschlikonSwitzerland
  2. 2.IBM Research DivisionT.J. Watson Research CenterYorktown HeightsUSA

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