Abstract
Molecular Beam Epitaxy has been used to grow Si1-yCy and Sil-x-yCyGex alloys. This allows some degree of independence between strain and bandgap in Si based semiconductors. Unlike the Si-Ge system the Si-C system has a high misfit (52%) and low solubility (> 10-6), with a propensity to compound formation, therefore, the structures are kinetically stabilized by low temperature growth. In this work, we first describe bandgap engineering applied to this system. We then consider the growth methodology and critical thickness. Strain compensation and strain engineering using the ternary system is then described. Finally we show that thermal degradation of these films does not occur till < 800°C first by interdiffusion and subsequently at higher temperatures by silicon carbide precipitation
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References
K. Eberl et al, J. Vac. Sci. Technol. B 10 (1992) 934
R.A. Soref, J. Appl. Phys 70 (1991) 2470
S.S. Iyer et al, Proc. Mat. Res. Soc 220 (1992) 581
S.S. Iyer et al Appl. Phys. Lett. 60 (1992) 2758
M.S. Goorsky et al, Appl. Phys. Lett. 60 (1992) 2758
D. Perovic et al, Thin Solid Films 183 (1989) 141
J.B. Posthill et al Appl. Phys. Lett. 56 (1990) 734
J.W. Matthews and A.E. Blakeslee J. Vacuum Sci Technol 12 (1975) 126
J.C. Bean et al J. Vac. Sci. Technol A 2 (1984)436
C.G. Tuppen, C.J. Gibbings, and M. Hockly, J. Cryst. Growth 94 (1989) 392
W. Wegscheider et al, To be published in J. Vac. Sci. Technol
J.C. Tsang et al, To be published in Appl. Phys. Lett
K. Eberl et al, Appl. Phys. Lett. 60 (1992) 3033
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© 1993 Springer Science+Business Media Dordrecht
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Powell, A.R., Eberl, K., Ek, B.A., Iyer, S.S. (1993). Si1-x-yGexCy Growth and Properties of the Ternary System. In: Salemink, H.W.M., Pashley, M.D. (eds) Semiconductor Interfaces at the Sub-Nanometer Scale. NATO ASI Series, vol 243. Springer, Dordrecht. https://doi.org/10.1007/978-94-011-2034-0_21
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DOI: https://doi.org/10.1007/978-94-011-2034-0_21
Publisher Name: Springer, Dordrecht
Print ISBN: 978-94-010-4900-9
Online ISBN: 978-94-011-2034-0
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