Abstract
We review in this paper the electronic properties of semiconductor heterojunctions. We focus on interface-specific phenomena, where the conditions of growth—including controlled contamination—may significantly alter the physical properties of the junction. We start outlining the basic concepts of our first-principles theory of the band offsets. We then discuss in some detail the case of Ge/GaAs, where the band offset significantly depends on interface features, owing to the difference in chemical valence which induces electrostatic effects. For this system, sound experimental evidence of noncommutativity of the band offsets has been reached. We then discuss the effects of ultrathin intralayers at heterojunctions and homojunctions, starting with the case of heterovalent implantations, such as GaAs/Ge/GaAs. In these cases, the intralayers control the band offset: the effect has been predicted by our theory and subsequently experimentally observed in several systems. We review some recent measurements and their current interpretation, particularly in relationship with interdiffusion and atomic ordering at the interface. Finally, we discuss the electronic and optical properties of isovalent intralayers, i.e ultrathin quantum wells, such as AlAs/GaAs/AlAs and Si/Ge/Si. We show how the spatial confinement of carriers in an isovalent intralayer strongly enhances interband optical properties and can be used for the optical characterization of semiconductor interfaces at the atomic scale
Access this chapter
Tax calculation will be finalised at checkout
Purchases are for personal use only
Preview
Unable to display preview. Download preview PDF.
References
Heterojunction Band Discontinuities: Physics and Device Application, Edited by F. Capasso and G. Margaritondo (North-Holland, Amsterdam, 1987)
S. Baroni, R. Resta, A. Baldereschi, and M. Peressi, in: Spectroscopy of semiconductor microstructures, edited by G. Fasol, A. Fasolino and P. Lugli, NATO ASI Series B, vol 206 (Plenum Publishing, New York, 1989), p 251
C.G. Van de Walle and R.M. Martin, Phys. Rev. B 35, 8154 (1987); Phys. Rev. B 37, 4801 (1988)
N.E. Christensen, Phys. Rev. B 37, 4528 (1988)
S. Lee, D.M. Bylander, and L. Kleinman, Phys. Rev. B 41, 10264 (1990)
R.G. Dandrea, S. Froyen, and A. Zunger, Phys. Rev. B 42, 3213 (1990)
A. Baldereschi, S. Baroni, and R. Resta, Phys. Rev. Lett. 61, 734 (1988)
Theory of the Inhomogeneous Electron Gas, edited by S. Lundqvist and N.H. March (Plenum, New York, 1983)
R. Resta, in: Proceedings of the 6th General Conference of the European Physical Society ”Trends in Physics”, edited by J. Janta and J. Pantoflícek (Polygrafia, Praga, 1984), p. 479
R. Resta, S. Baroni, and A. Baldereschi, Superlattices and Microstructures, 6, 31 (1989)
S. Baroni, R. Resta, and A. Baldereschi, in: Proceedings of the 19th International Conference on the Physics of Semiconductors, edited by W. Zawadzky, (Institute of Physics, Polish Academy of Sciences, Wroclaw 1988), p. 525
S. Baroni, M. Peressi, R. Resta and A. Baldereschi, in: Proceedings of the 21th International Conference on the Physics of Semiconductors, edited by X. Xide and K. Huang (World Scientific, Singapore, 1992)
R.W. Grant, J.R. Waldrop, S.P. Kowalczyk, and E.A. Kraut, J. Vacuum Sci. Technol. B 3, 1295 (1985)
S.P. Kowalczyc, E.A. Kraut, J.R. Waldrop, and R.W. Grant, J. Vacuum Sci. Technol. 21, 482 (1982)
K. Kunc and R.M. Martin, Phys. Rev. B 35, 8154 (1987)
G. Biasiol, L. Sorba, G. Bratina, R. Nicolini, A. Franciosi, M. Peressi, S. Baroni, R. Resta, and A. Baldereschi, Phys. Rev. Lett. 69, 1283 (1992)
M. Marsi, R. Houdré, A. Rudra, M. Ilegems, F. Gozzo, C. Coluzza, and G. Margaritondo, to appear in Phys. Rev
D.W. Niles, G. Margaritondo, P. Perfetti, C. Quaresima, and M. Capozi, Appl. Phys. Lett. 47, 1092 (1985); D.W. Niles, E. Colavita, G. Margaritondo, P. Perfetti, C. Quaresima, and M. Capozzi, J. Vac. Sci. Technol. A 4, 962 (1986)
F. Capasso, A.Y. Cho, K. Mohammed, and P.W. Foy, Appl. Phys. Lett. 46, 664 (1985); F. Capasso, K. Mohammed, and A.Y. Cho, J. Vac. Sci. Technol. B 3, 1245 (1985)
L. Sorba, G. Bratina, A. Antonini, J.F. Walker, M. Mikovic, G. Ceccone, and A. Franciosi, Phys. Rev. B 43, 2450 (1991)
J.M. Moison, F. Houzay, and L. Leprince, Phys. Rev. B 46, 7923 (1992)
L. Vanzetti, X. Yu, A. Raisanen, L. Sorba, G. Haustad, G. Bratina, and A. Franciosi, J. Cryst. Growth 117, 573 (1992)
G. Bratina, R. Nicolini, L. Sorba, L. Vanzetti, G. Mula, X. Yu, and A. Franciosi, submitted to J. Cryst. Growth
M. Marsi, S. La Rosa, Y. Hwu, F. Gozzo, G. Coluzza, A. Baldereschi, G. Margaritondo, J.T. McKinley, S. Baroni, and R. Resta, J. Appl. Phys. 71, 2048 (1992), and references quoted therein
E.A. Kraut, R.W. Grant, J.R. Waldrop, and S.P. Kowalczyk, Phys. Rev. B 28, 1965 (1983)
M. Peressi, S. Baroni, R. Resta, and A. Baldereschi, Phys. Rev. B 43, 7347 (1991)
L.C. Andreani, private communication
P. Boring and B. Gil, private communication
L. Colombo, R. Resta, and S. Baroni, Phys. Rev. B 44, 5572 (1991)
R. Cingolani, O. Brandt, L. Tapfer, G. Scamarcio, G.C. La Rocca, and K. Ploog, Phys. Rev. B 42, 3209 (1990), and references quoted therein
J.F. Carlin, J.F. Houdré, A. Rudra, and M. Ilegems, Appl. Phys. Lett. 59, 23 (1991)
G. Bastard, Wave Mechanics Applied to Semiconductor Heterostructures (Les Editions de Physiques, Les Ulis, 1988)
H.P. Hjalmarson, P. Vogl, D.J. Wolford, and J.D. Dow, Phys. Rev. Lett. 44, 810 (1980)
K. Mäder and A. Baidereschi, in: Proceedings of the Int. Meeting on the Optics of Excitons in Confined Systems, edited by A. D’Andrea, R. Del Sole, R. Girlanda, and A. Quattropani (Institute of Physics, Bristol, 1992), p. 341
K. Mäder and A. Baldereschi, Mat. Res. Soc. Symp. 240, 597 (1992)
G.F. Koster and J.C. Slater, Phys. Rev. 96, 1208 (1954)
R.A. Faulkner, Phys. Rev. 175, 991 (1968)
A. Baldereschi and J.J. Hopfield, Phys. Rev. Lett. 28, 171 (1972)
E.N. Economou, Green’s Functions in Quantum Physics (Springer, Berlin, 1979)
K. Mäder and A. Baldereschi, unpublished; K. Mäder, Ph. D. Thesis, Swiss Federal Institute of Technology, Zurich, 1992 (Diss. ETH Nr. 9825)
Author information
Authors and Affiliations
Editor information
Editors and Affiliations
Rights and permissions
Copyright information
© 1993 Springer Science+Business Media Dordrecht
About this chapter
Cite this chapter
Baldereschi, A., Resta, R., Peressi, M., Baroni, S., Mäder, K. (1993). Engineering of Semiconductor Heterostructures by Ultrathin Control Layers. In: Salemink, H.W.M., Pashley, M.D. (eds) Semiconductor Interfaces at the Sub-Nanometer Scale. NATO ASI Series, vol 243. Springer, Dordrecht. https://doi.org/10.1007/978-94-011-2034-0_10
Download citation
DOI: https://doi.org/10.1007/978-94-011-2034-0_10
Publisher Name: Springer, Dordrecht
Print ISBN: 978-94-010-4900-9
Online ISBN: 978-94-011-2034-0
eBook Packages: Springer Book Archive