Abstract
Lateral migration and vertical replacement processes of surface adatoms during the epitaxial growth of III-V compound semiconductors have been investigated through RHEED observation and photoluminescence measurement. Migration-enhanced epitaxy (MEE) has proved useful in investigating these processes. RHEED observation during the growth of GaAs revealed that the migration distance of Ga atoms was considerably enhanced by MEE. As a result, step-flow growth dominates, and atomically flat AlGaAs-GaAs heterojunctions can be grown. During growth of GaAs on InAs by MBE or MEE, most of the In atoms are replaced by newly deposited Ga atoms resulting in a segregation of In atoms to the surface. This phenomenon is circumvented by increasing the As pressure during growth, or by lowering the growth temperature. These results are compared with those of MOCVD
This is a preview of subscription content, log in via an institution to check access.
Access this chapter
Tax calculation will be finalised at checkout
Purchases are for personal use only
Preview
Unable to display preview. Download preview PDF.
References
Y. Horikoshi, M. Kawashima, and H. Yamaguchi, Jpn. J. Appl. Phys. 25 (1986) L868
N. Kobayashi, T. Makimoto, and Y. Horikoshi, Jpn. J. Appl. Phys. 24 (1985) L962
Y. Horikoshi, M. Kawashima, and H. Yamaguchi, Jpn. J. Appl. Phys. 27 (1988) 169
M. Sato and Y. Horikoshi, Appl. Phys. Lett. 52 (1988) 123
M. Sato and Y. Horikoshi, Appl. Phys. Lett. 56 (1990) 1555
H. Yamaguchi and Y. Horikoshi, Jpn. J. Appl. Phys. 28 (1989) L2010
Y. Horikoshi, H. Yamaguchi, F. Briones, and M. Kawashima, J. Crystal Growth 105 (1990) 326
H. Yamaguchi and Y. Horikoshi, Japan. J. Appl. Phys. 28 (1989) L1456
J. M. Gaines, P. M. Petroff, H. Kroemer, R. J. Simes, R. S. Geels and J. H. English, J. Vacuum. Sci. Technol. B6 (1988) 1378
K. Ohta, T. Kojima and T. Nakagawa, J. Crystal Growth 95 (1989) 71
M. Kawabe and T. Sugaya, Japan. J. Appl. Phys. 28 (1989) L1077
P. R. Pukite, G. S. Petrich, S. Batra and P. I. Cohen, J. Crystal Growth 95 (1988) 269
T. Shitara and T. Nishinaga, Japan. J. Appl. Phys. 28 (1989) 1212
H. Asai, J. Crystal Growth 80 (1987) 425
T. Fukui and H. Saito, J. Vacuum Sci. Technol. B6 (1988) 1373
H. Yamaguchi and Y. Horikoshi, J. Appl. Phys. 68 (1990) 1610
N. Kobayashi and Y. Horikoshi, Appl. Phys. Lett. 50 (1987) 909
M. Sato and Y. Horikoshi, J. Appl. Phys. 69 (1991) 7697
Author information
Authors and Affiliations
Editor information
Editors and Affiliations
Rights and permissions
Copyright information
© 1993 Springer Science+Business Media Dordrecht
About this chapter
Cite this chapter
Horikoshi, Y., Kawashima, M., Yamaguchi, H., Sato, M. (1993). Surface Atomic Processes during Epitaxial Growth. In: Salemink, H.W.M., Pashley, M.D. (eds) Semiconductor Interfaces at the Sub-Nanometer Scale. NATO ASI Series, vol 243. Springer, Dordrecht. https://doi.org/10.1007/978-94-011-2034-0_1
Download citation
DOI: https://doi.org/10.1007/978-94-011-2034-0_1
Publisher Name: Springer, Dordrecht
Print ISBN: 978-94-010-4900-9
Online ISBN: 978-94-011-2034-0
eBook Packages: Springer Book Archive