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Part of the book series: NATO ASI Series ((NSSE,volume 239))

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Abstract

Recently, 3-dimensionally laterally-confined semiconductor quantum wells (“quantum dots”) have been realized. These structures are analogous to semiconductor atoms, with energy level separation of order 25 meV, and tunable by the confining potentials. A systematic study reveals a (radius)-1 dependence on the energy separation. The spectra corresponds to resonant tunneling from laterally-confined emitter contact subbands through the discrete 3-dimensionally confined quantum dot states. Momentum non-conservation is observed in these structures.

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References

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© 1993 Springer Science+Business Media Dordrecht

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Reed, M.A. et al. (1993). Semiconductor Quantum Dot Resonant Tunneling Spectroscopy. In: Avouris, P. (eds) Atomic and Nanometer-Scale Modification of Materials: Fundamentals and Applications. NATO ASI Series, vol 239. Springer, Dordrecht. https://doi.org/10.1007/978-94-011-2024-1_21

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  • DOI: https://doi.org/10.1007/978-94-011-2024-1_21

  • Publisher Name: Springer, Dordrecht

  • Print ISBN: 978-94-010-4895-8

  • Online ISBN: 978-94-011-2024-1

  • eBook Packages: Springer Book Archive

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