Abstract
It has been predicted that sharp and strong interband photoluminescence (PL) lines should be obtained in quantum box structures, allowing excellent laser performance. We explain however the usually observed decrease in interband PL efficiency with full three-dimensional quantum box quantization by the unavoidable energy relaxation bottleneck which develops in a fully quantized system. This bottleneck is conversely shown to be extremely useful in enhancing the performances of those devices based on intersubband transitions. An independent scheme can however be used to yield narrow interband PL lines (sharper than kT) through the photon quantization occuring in quantum microcavities, which selects the recombining electron-hole pair or exciton thanks to energy and momentum conservation. At exact resonance between cavity photons and excitons a normal-mode splitting appears, which can also be viewed as the vacuum-field induced Rabi splitting of the exciton.
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Weisbuch, C. (1993). Towards Fully Quantized Optoelectronic Semiconductor Heterostructures: Quantum Boxes or Quantum Microcavities?. In: Lockwood, D.J., Pinczuk, A. (eds) Optical Phenomena in Semiconductor Structures of Reduced Dimensions. NATO ASI Series, vol 248. Springer, Dordrecht. https://doi.org/10.1007/978-94-011-1912-2_27
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DOI: https://doi.org/10.1007/978-94-011-1912-2_27
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