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Multiple Quantum Well (MQW) Modulators

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Part of the NATO ASI Series book series (NSSE, volume 226)

Abstract

Multiple Quantum Wells (MQWs) have been shown to have properties that are different from the simple bulk semiconductors that are their constituents. One of the most useful is a large electroabsorption effect which can be utilized to make optical intensity modulatorsl. In addition, the degrees of freedom presented to a device designer by MQWs have been shown to allow other interesting effects, such as a blue-shift superlattice2 and the barrier reservoir and quantum well electron transfer structure (BRAQWETS)3.4. In this chapter, we will describe some of the underlying physics behind these effects, and demonstrate how MQWs can be used for optoelectronic modulators and other devices.

Keywords

Insertion Loss Multiple Quantum Well Electric Field Profile Electroabsorption Modulator Incident Optical Intensity 
These keywords were added by machine and not by the authors. This process is experimental and the keywords may be updated as the learning algorithm improves.

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Copyright information

© Springer Science+Business Media Dordrecht 1992

Authors and Affiliations

  1. 1.AT & T Bell LaboratoriesCrawford Hill LaboratoryHolmdelUSA

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