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Quantum Well Lasers

Chapter
Part of the NATO ASI Series book series (NSSE, volume 226)

Abstract

The ability to fabricate single quantum well (SQW) and multiple quantum well (MQW) devices has given rise to new optical and electronic devices as well as to new physical phenomena [1]. Since the first investigation of optical properties in quantum wells by Dingle et al., [2] the application of quantum well structures to semiconductor laser diodes [3], [4] has received considerable attention because of physical interest as well as its superior characteristics, such as low threshold current density [5], [6], low temperature dependence of threshold current [9]-[1], lasing wavelength tunability, and excellent dynamic properties [10]-[12]. By controlling the width of the quantum wells, one can modify the electron and hole wavefunctions, which leads to the modification of material parameters. This results in improvements of the laser characteristics, as well as introduction of new concepts to semiconductor optical devices.

Keywords

Quantum Well Semiconductor Laser Threshold Current Modal Gain Multiple Quantum Well 
These keywords were added by machine and not by the authors. This process is experimental and the keywords may be updated as the learning algorithm improves.

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Copyright information

© Springer Science+Business Media Dordrecht 1992

Authors and Affiliations

  1. 1.Research Center for Advanced Science and TechnologyUniversity of TokyoTokyoJapan

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