Main Aspects of MOCVD and MBE Growth Techniques

Part of the NATO ASI Series book series (NSSE, volume 226)


The concept of heterojunctions with lattice matched III - V alloys has given rise to new classes of electronic and optoelectronic devices. This is of particular importance for fiber optic communications. High speed field effect transistors, high performances multiquantum well lasers and also integrated optoelectronic components on the same chip have been made possible by using lattice matched heterojunctions of III – V material.


Molecular Beam Epitaxy Reflection High Energy Electron Diffraction Molecular Beam Epitaxy Growth Effusion Cell Growth Interruption 
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Copyright information

© Springer Science+Business Media Dordrecht 1992

Authors and Affiliations

  1. 1.Alcatel-Alsthom RechercheRoute de NozayMarcoussisFrance

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