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Main Aspects of MOCVD and MBE Growth Techniques

Chapter
Part of the NATO ASI Series book series (NSSE, volume 226)

Abstract

The concept of heterojunctions with lattice matched III - V alloys has given rise to new classes of electronic and optoelectronic devices. This is of particular importance for fiber optic communications. High speed field effect transistors, high performances multiquantum well lasers and also integrated optoelectronic components on the same chip have been made possible by using lattice matched heterojunctions of III – V material.

Keywords

Molecular Beam Epitaxy Reflection High Energy Electron Diffraction Molecular Beam Epitaxy Growth Effusion Cell Growth Interruption 
These keywords were added by machine and not by the authors. This process is experimental and the keywords may be updated as the learning algorithm improves.

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Copyright information

© Springer Science+Business Media Dordrecht 1992

Authors and Affiliations

  1. 1.Alcatel-Alsthom RechercheRoute de NozayMarcoussisFrance

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