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Multicomponent and Multilayered Thin Films for Advanced Microtechnologies: Techniques, Fundamentals and Devices pp 87–107Cite as

Techniques for the Growth of Crystalline Films by Molecular Beam Deposition

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Part of the book series: NATO ASI Series ((NSSE,volume 234))

Abstract

The preceding chapter laid out a physical basis for molecular beam deposition. In this chapter that conceptual framework will be translated into the reality of common laboratory apparatus and practices. As a starting point, classic semiconductor molecular beam epitaxy (MBE) [1,2] will be briefly described. Then, the focus will turn to leading edge equipment and technique issues that should be of interest to the broader thin film deposition audience for whom this volume is intended. Those issues include: alternate thermal deposition sources, ion beam doping, direct sensing of deposition fluxes and true deposition rate, and production considerations of uniformity, multiple wafer deposition, automation and particulate control.

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Author information

Authors and Affiliations

  1. AT&T Bell Laboratories, 600 Mountain Ave., Murray Hill, NJ, 07974, USA

    J. C. Bean

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  1. J. C. Bean
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Editor information

Editors and Affiliations

  1. MCNC, Center for Microelectronics, System Technologies, Research Triangle Park, North Carolina, USA

    Orlando Auciello

  2. Microstructure Research Center, University of Wuppertal, Wuppertal, Germany

    Jürgen Engemann

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© 1993 Springer Science+Business Media Dordrecht

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Bean, J.C. (1993). Techniques for the Growth of Crystalline Films by Molecular Beam Deposition. In: Auciello, O., Engemann, J. (eds) Multicomponent and Multilayered Thin Films for Advanced Microtechnologies: Techniques, Fundamentals and Devices. NATO ASI Series, vol 234. Springer, Dordrecht. https://doi.org/10.1007/978-94-011-1727-2_4

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  • DOI: https://doi.org/10.1007/978-94-011-1727-2_4

  • Publisher Name: Springer, Dordrecht

  • Print ISBN: 978-94-010-4757-9

  • Online ISBN: 978-94-011-1727-2

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