Abstract
Si1-xGex thin films have been grown on silicon substrates by Ion Beam Sputter Deposition (IBSD) in a UHV system. Film stress has been determined from the change in deflection curvature of the substrate after deposition and strain has been investigated by double-crystal X-ray diffractometry. This property has been studied as a function of growth temperature and composition (0≤x≤60%). The stress is mostly compressive and greater than that observed in MBE films prepared under similar deposition conditions and therefore cannot be explained by the lattice mismatch. The excess stress, due to the deposition technique, is discussed in terms of incorporation of rare gas and bombardment effects on the growing film.
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© 1993 Springer Science+Business Media Dordrecht
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Meyer, F. et al. (1993). Stress in Si1-xGex Films Prepared by Ion Beam Sputtering. In: Auciello, O., Engemann, J. (eds) Multicomponent and Multilayered Thin Films for Advanced Microtechnologies: Techniques, Fundamentals and Devices. NATO ASI Series, vol 234. Springer, Dordrecht. https://doi.org/10.1007/978-94-011-1727-2_28
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DOI: https://doi.org/10.1007/978-94-011-1727-2_28
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