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Local Phonons in Strained Superlattices

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Phonons in Semiconductor Nanostructures

Part of the book series: NATO ASI Series ((NSSE,volume 236))

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Abstract

Calculations based on a planar force-constant model for strained-layer superlattices (SLSs) are presented. The calculations are compared with the experimental results of Raman scattering by optical phonons in GaP/InP and AlAs/InAs SLSs. The local character of some of the optical phonons of these superlattices has been used to study the electronic structure of (001)-oriented GaP/InP and AlAs/InAs SLSs and to characterize structurally (311)-oriented AlAs/InAs SLSs.

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© 1993 Springer Science+Business Media Dordrecht

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Armelles, G., Alonso, M.I., Castrillo, P. (1993). Local Phonons in Strained Superlattices. In: Leburton, JP., Pascual, J., Torres, C.S. (eds) Phonons in Semiconductor Nanostructures. NATO ASI Series, vol 236. Springer, Dordrecht. https://doi.org/10.1007/978-94-011-1683-1_7

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  • DOI: https://doi.org/10.1007/978-94-011-1683-1_7

  • Publisher Name: Springer, Dordrecht

  • Print ISBN: 978-94-010-4736-4

  • Online ISBN: 978-94-011-1683-1

  • eBook Packages: Springer Book Archive

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