Abstract
Calculations based on a planar force-constant model for strained-layer superlattices (SLSs) are presented. The calculations are compared with the experimental results of Raman scattering by optical phonons in GaP/InP and AlAs/InAs SLSs. The local character of some of the optical phonons of these superlattices has been used to study the electronic structure of (001)-oriented GaP/InP and AlAs/InAs SLSs and to characterize structurally (311)-oriented AlAs/InAs SLSs.
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© 1993 Springer Science+Business Media Dordrecht
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Armelles, G., Alonso, M.I., Castrillo, P. (1993). Local Phonons in Strained Superlattices. In: Leburton, JP., Pascual, J., Torres, C.S. (eds) Phonons in Semiconductor Nanostructures. NATO ASI Series, vol 236. Springer, Dordrecht. https://doi.org/10.1007/978-94-011-1683-1_7
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DOI: https://doi.org/10.1007/978-94-011-1683-1_7
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