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Confinement and Disorder Effects on Phonons in Semiconductor Microstructures

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Phonons in Semiconductor Nanostructures

Part of the book series: NATO ASI Series ((NSSE,volume 236))

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Abstract

The lattice dynamics of superlattices is now very well understood and most of the theoretical predictions have been quantitatively verified by Raman scattering, at least on GaAs/AlAs structures. This system is particularly interesting for several reasons:

  • samples are currently available at a very high and controlled quality,

  • phonon dispersion curves in the bulk constituents GaAs and AlAs are known,

  • almost perfect lattice matching is achieved,

  • GaAlAs alloy lattice dynamics is well described by reasonably simple models.

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© 1993 Springer Science+Business Media Dordrecht

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Jusserand, B. (1993). Confinement and Disorder Effects on Phonons in Semiconductor Microstructures. In: Leburton, JP., Pascual, J., Torres, C.S. (eds) Phonons in Semiconductor Nanostructures. NATO ASI Series, vol 236. Springer, Dordrecht. https://doi.org/10.1007/978-94-011-1683-1_6

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  • DOI: https://doi.org/10.1007/978-94-011-1683-1_6

  • Publisher Name: Springer, Dordrecht

  • Print ISBN: 978-94-010-4736-4

  • Online ISBN: 978-94-011-1683-1

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