Modelling of Active Semiconductor Circuit Elements

Abstract

These are typical high-frequency devices where the active region is given by the transition metal — semiconductor. The current is almost exclusively provided by electrons and according to the known thermoion theory the static I – V characteristic of this diode is given by

$$ I_{jR} = I_S e(\frac{{u_j }}{{^{nkT} }}) - 1 $$

(1)

where

$$ I_S = A*ST^2 e^{\frac{{ - e\varphi B}}{{kT}}} $$

I _jR is the current through the transition, U _j is the voltage at the transition, n is ideality factor, I _S is the saturated current through the transition, A ^* is the Richardson’s constant, Φ _B is the height of the potential barrier from the metal to the semiconductor and S is the transition area.