Abstract
Low temperature photoluminescence studies on strained SiGe multiple quantum well wires and dots were performed on structures realized by selective epitaxy with LPCVD. The tendency of facet formation was exploited to realize laterally confined (100) structures down to 50 nm. Besides the emission from the (100) quantum well layers excitonic emissions from quantum well layers from flat {110} facets and from islands in the (100) and {311} facets were detected. All dots and wires luminesce stronly down to the lowest achieved dimension of 50 nm, the integral intensity exceeding that from the substrate.
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© 1995 Springer Science+Business Media Dordrecht
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Vescan, L. (1995). Radiative Recombination in SiGe/Si Dots and Wires Selectively Grown by LPCVD. In: Eberl, K., Petroff, P.M., Demeester, P. (eds) Low Dimensional Structures Prepared by Epitaxial Growth or Regrowth on Patterned Substrates. NATO ASI Series, vol 298. Springer, Dordrecht. https://doi.org/10.1007/978-94-011-0341-1_16
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DOI: https://doi.org/10.1007/978-94-011-0341-1_16
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