Abstract
Quantum structures of Si/Ge system are successfully fabricated by utilizing advantages of gas source molecular beam epitaxy (GSMBE). Growth kinetics of gas molecules is significantly dependent on the surface, providing unique structures on patterned substrate. Crystal quality and pattern formation of quantum structures strongly depends on the growth condition of GSMBE and then a new technique is developed to meet difficult requirements to realize SiGe/Si quantum wires (QWRs) with high quality and well-defined structures. QWRs grown here give rise to characteristic optical properties of the wire structure. Exciton diffusion dynamics is also studied in the composite structure grown on patterned substrates and important quantities of SiGe/Si quantum structures are deduced.
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© 1995 Springer Science+Business Media Dordrecht
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Shiraki, Y., Usami, N., Mine, T., Akiyama, N., Fukatsu, S. (1995). Formation and Properties of SiGe/Si Quantum Wire Structures. In: Eberl, K., Petroff, P.M., Demeester, P. (eds) Low Dimensional Structures Prepared by Epitaxial Growth or Regrowth on Patterned Substrates. NATO ASI Series, vol 298. Springer, Dordrecht. https://doi.org/10.1007/978-94-011-0341-1_14
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DOI: https://doi.org/10.1007/978-94-011-0341-1_14
Publisher Name: Springer, Dordrecht
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