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Formation and Properties of SiGe/Si Quantum Wire Structures

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Book cover Low Dimensional Structures Prepared by Epitaxial Growth or Regrowth on Patterned Substrates

Part of the book series: NATO ASI Series ((NSSE,volume 298))

Abstract

Quantum structures of Si/Ge system are successfully fabricated by utilizing advantages of gas source molecular beam epitaxy (GSMBE). Growth kinetics of gas molecules is significantly dependent on the surface, providing unique structures on patterned substrate. Crystal quality and pattern formation of quantum structures strongly depends on the growth condition of GSMBE and then a new technique is developed to meet difficult requirements to realize SiGe/Si quantum wires (QWRs) with high quality and well-defined structures. QWRs grown here give rise to characteristic optical properties of the wire structure. Exciton diffusion dynamics is also studied in the composite structure grown on patterned substrates and important quantities of SiGe/Si quantum structures are deduced.

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References

  1. H. Hirayama, T. Tatsumi, and N. Aizaki; J. Crys. Growth 95, 476 (1989)

    Article  CAS  Google Scholar 

  2. H. Hirayama, T. Tatsumi, and N. Aizaki; Appl. Phys. Lett. 52, 2242 (1988)

    Article  CAS  Google Scholar 

  3. N.Usami, T.Mine, S.Fukatsu, and Y.Shiraki; Appl. Phys. Lett. 63, 2789 (1993)

    Article  CAS  Google Scholar 

  4. H. Hirayama, M. Hiroi, K. Koyama, T. Tatsumi, F. Sato; Mat. Res. Soc. Symp. Proc. 220, (1991) p.545

    Article  CAS  Google Scholar 

  5. S. Fukatsu, N. Usami, Y. Kato, H. Sunamura, Y. Shiraki, H. Oku, T. Ohnishi, Y. Ohmori, and K. Okumura; J. Crystal Growth 136, 315 (1994)

    Article  CAS  Google Scholar 

  6. T.Mine, N.Usami, Y.Shiraki, and S.Fukatsu; J. Crystal Growth, to be published

    Google Scholar 

  7. N. Usami, T. Mine, S. Fukatsu, and Y. Shiraki; Appl. Phys. Lett. 64, 1126 (1994)

    Article  CAS  Google Scholar 

  8. N.Ushami, H.Sunamura, T.Mine, S.Fukatsu, and Y.Shiraki; J. Crystal Growth, to be published

    Google Scholar 

  9. J.Feldman, G.Peter, E.O.Göbel, P.Dawson, K. Moore, C.Foxon, and R.J.Elliott; Phys. Rev. Lett. 59, 2337 (1987)

    Article  Google Scholar 

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Author information

Authors and Affiliations

  1. Research Center for Advanced Science and Technology, The University of Tokyo, 4-6-1 Komaba, Meguro-ku, Tokyo, 153, Japan

    Y. Shiraki, N. Usami, T. Mine & N. Akiyama

  2. Department of Pure and Applied Sciences, The University of Tokyo, 3-8-1 Komaba, Meguro-ku, Tokyo, 153, Japan

    S. Fukatsu

Authors
  1. Y. Shiraki
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  2. N. Usami
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  3. T. Mine
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  4. N. Akiyama
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  5. S. Fukatsu
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Editor information

Editors and Affiliations

  1. Max-Planck-Institut für Festkörperforschung, Stuttgart, Germany

    Karl Eberl

  2. Materials Department, College of Engineering, University of California, Santa Barbara, California, USA

    Pierre M. Petroff

  3. Department of Information Technology, University Gent — IMEC, Gent, Belgium

    Piet Demeester

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© 1995 Springer Science+Business Media Dordrecht

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Shiraki, Y., Usami, N., Mine, T., Akiyama, N., Fukatsu, S. (1995). Formation and Properties of SiGe/Si Quantum Wire Structures. In: Eberl, K., Petroff, P.M., Demeester, P. (eds) Low Dimensional Structures Prepared by Epitaxial Growth or Regrowth on Patterned Substrates. NATO ASI Series, vol 298. Springer, Dordrecht. https://doi.org/10.1007/978-94-011-0341-1_14

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  • DOI: https://doi.org/10.1007/978-94-011-0341-1_14

  • Publisher Name: Springer, Dordrecht

  • Print ISBN: 978-94-010-4151-5

  • Online ISBN: 978-94-011-0341-1

  • eBook Packages: Springer Book Archive

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