Abstract
Diamond Metal-Insulator-Semiconchictor (MIS) devices hold great potential for applications requiring long storage times and superlative mechanical, electrical, and chemical properties. In particular, diamond is the ideal material for constructing imaging devices for Vacuum Ultraviolet, X-ray, and energetic particle fluxes. Results with metal-semiconductor-metal [1] devices and diodes [11] demonstrate that diamond has favorable spectral response characteristics for a variety of detector applications. Diamond’s lack of native oxide is particularly helpful for ultraviolet imagers since native oxides tend to have uncontrolled properties and strong absorption in the far UV. [2][18][9][7][19].
This is a preview of subscription content, log in via an institution.
Buying options
Tax calculation will be finalised at checkout
Purchases are for personal use only
Learn about institutional subscriptionsPreview
Unable to display preview. Download preview PDF.
References
S C Binari, M Marchywka, D A Koolbeck, H B Dietrich, and D Moses. Diamond MSM UV photodetectors. Jrnl. of Diamond and Related Materials, 2(2):1020-1023, February 1993.
L R Canfield, J Kerner, and R Korde. Stability and QE performance of silicon photodiode detectors in the far ultraviolet. Applied Optics, 28(18):3940, September 1989.
S H Chiao and G A Antypas. Photocapacitance effects in deep traps in n-type InP. J. Appl. Phys., 49(1):466-468, January 1978.
T W Collins and J N Churchill. Exact modelling of the transient response of an MOS capacitor. IEEE Trans. ED, ED-22(3):90-101, March 1975.
G Davies. The Optical Properties of Diamonds, volume 13. Marcell Decker Inc., New York, 1977.
R G Farrer. On the substitutional nitrogen donor in diamond. Solid State Communications, 7(9):685-687, 1969.
J R Janesick, D Campbell, T Elliot, and T Daud. Flash technology for CCD imaging in the UV. Optical Engineering, 26(9):852, September 1987.
E Kamieniecki. Low temperature photocapacity measurement in MOS structure. Solid State Electronics, 16:1487-1493, 1973.
Raj Korde and Jon Geist. Quantum efficiency stability of silicon photodiodes. Applied Optics, 26(24):5284, December 1987.
M Marchywka, S C Binari, and D Moses. Diamond MIS capacitors for integrating radiation detection. In Proceedings of the 2nd Interntaional Conference on the Applications of Diamond Films and Related Materials, Saitama, Japan, August 1993.
M Marchywka, J F Hochedez, M W Geis, D G Socker, D Moses, and R T Goldberg. Ultraviolet photoresponse characteristics of diamond diodes. Applied Optics, 30(34):5011-5013, December 1991.
M J Marchywka and D Moses. Photo-characterization of diamond MIS capacitors. IEEE Electron Device Transactions, July 1994.
E H Nicollian and J R Brews. MOS Physics and Technology. John Wiley and Sons, New York, 1982.
R F Pierret and W M Au. Photo-accelerated MOS-C C-t transient measurements. Solid State Electronics, 30(9):983-987, 1987.
R F Pierret and C T Sah. Quantitative analysis of the effects of steady-state illumination on the MOS-capacitor I. Solid State Electronics, 13:269-288, 1970.
C T Sah, L Forbes, L L Rosier, and A F Tasch. Thermal and optical emission and capture rates and cross sections of electrons and holes at imperfection centers in semiconductors from photo and dark junction current capacitance experiments. Solid State Electronics, 13:759-788, 1970.
C T Sah, L L Rosier, and L Forbes. Direct observation of the multiplicity of impurity charge states in semiconductors from low-temperature high-frequency photo-capacitance. Applied Physics Letters, 15(10):316-318, November 1969.
N S Saks, D McCarthy, M C Peckerar, and DJ Michels. Deep depletion CCD’s for UV and X-ray imaging for astronomy. Proc. Custom Integrated Circuits Conf., page 124, 1985.
R A Stern, R C Catura, R Kimble, A F Davidsen, M Winzenread, MM Blouke, R Hayes, DM Walton, and J L Culhane. Ultraviolet and extreme ultraviolet response of CCD detectors. Optical Engineering, 26(9):875, September 1987.
M Zerbst. Relaxation effects in MIS devices. Z. angew. Phys., 2(22):30-33, October 1966.
Author information
Authors and Affiliations
Editor information
Editors and Affiliations
Rights and permissions
Copyright information
© 1995 Springer Science+Business Media Dordrecht
About this chapter
Cite this chapter
Marchywka, M.J., Moses, D., Binari, S.C., Pehrsson, P.E. (1995). Diamond MIS Capacitors with Silicon Dioxide Dielectric. In: Prelas, M.A., Gielisse, P., Popovici, G., Spitsyn, B.V., Stacy, T. (eds) Wide Band Gap Electronic Materials. NATO ASI Series, vol 1. Springer, Dordrecht. https://doi.org/10.1007/978-94-011-0173-8_17
Download citation
DOI: https://doi.org/10.1007/978-94-011-0173-8_17
Publisher Name: Springer, Dordrecht
Print ISBN: 978-94-010-4078-5
Online ISBN: 978-94-011-0173-8
eBook Packages: Springer Book Archive