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Surface and Bulk Conductivity of Hydrogen Treated Polycrystalline Diamond

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Wide Band Gap Electronic Materials

Part of the book series: NATO ASI Series ((ASHT,volume 1))

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Abstract

The great attention attracted at present to the problem of hydrogenation of a diamond is caused by the fact that CVD diamond grows from the gas phase containing more than 90% of hydrogen, which is able to penetrate into the structure of growing film. In opinion of a number of authors [1,2,3,4] hydrogen influences upon conductivity of CVD diamond films (DF) and single diamond crystals, which opens perspectives to modify the electrophysical properties of CVD diamond by hydrogen treatment.

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5. References

  1. Landstrass, M.L. and Ravi, K.V. (1989) Hydrogen passivation of electrically active defects in diamond, Appl. Phys. Lett.55(14), 1391–1393.

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  2. Landstrass, M.L. and Ravi, K.V. (1989) Resistivity of chemical vapour deposited diamond films, Appl. Phys. Lett.55(10), 975–977.

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  3. Albin, S. and Watkins, Z. (1990) Current-voltage characteristics of thin films and bulk diamond treated in hydrogen plasma, IEEE Electron Device Lett.11(4), 159–161.

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  4. Mori, Y. et al (1993) Characterization of surface conductive diamond layer grown by microwave plasma chemical vapour deposition, Jpn. J. Appl. Phys.32L, 987–989.

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© 1995 Springer Science+Business Media Dordrecht

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Sokolina, G.A., Bouilov, L.L., Botev, A.A., Markin, A.V., Timofeev, M.A. (1995). Surface and Bulk Conductivity of Hydrogen Treated Polycrystalline Diamond. In: Prelas, M.A., Gielisse, P., Popovici, G., Spitsyn, B.V., Stacy, T. (eds) Wide Band Gap Electronic Materials. NATO ASI Series, vol 1. Springer, Dordrecht. https://doi.org/10.1007/978-94-011-0173-8_12

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  • DOI: https://doi.org/10.1007/978-94-011-0173-8_12

  • Publisher Name: Springer, Dordrecht

  • Print ISBN: 978-94-010-4078-5

  • Online ISBN: 978-94-011-0173-8

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