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Some Common Pathologies in Step Growth: Impurities and Surface Reconstruction

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Science and Technology of Crystal Growth

Abstract

Crystal growth involving steps only occurs for F-faces below the roughening temperature. Here the steps have a non-zero edge free energy for all directions on the crystal face and the surface grows layer by layer [1,2]. To generate new layers, the activation barrier for two-dimensional nucleation has to be overcome or screw dislocations continuously emitting steps (spiral growth [3]) must be present. Therefore such F-faces are the slowest growing faces of a crystal and determine its growth form. Their morphological importance is higher than that of F-faces above the roughening temperature or of S and K-faces, which grow by random addition of growth units on the surface [2,4].

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Author information

Authors and Affiliations

  1. RIM Department of Solid State Chemistry, University of Nijmegen, Tornooiveld, Nijmegen, 6525 ED, The Netherlands

    W. J. P. Van Enckevort

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  1. W. J. P. Van Enckevort
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Editors and Affiliations

  1. Department of Interfaces and Thermodynamics, Utrecht University, The Netherlands

    J. P. van der Eerden

  2. Laboratory for Process Equipment, Delft University of Technology, The Netherlands

    O. S. L. Bruinsma

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Van Enckevort, W.J.P. (1995). Some Common Pathologies in Step Growth: Impurities and Surface Reconstruction. In: van der Eerden, J.P., Bruinsma, O.S.L. (eds) Science and Technology of Crystal Growth. Springer, Dordrecht. https://doi.org/10.1007/978-94-011-0137-0_25

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  • DOI: https://doi.org/10.1007/978-94-011-0137-0_25

  • Publisher Name: Springer, Dordrecht

  • Print ISBN: 978-94-010-4062-4

  • Online ISBN: 978-94-011-0137-0

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