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Part of the book series: NATO ASI Series ((ASHT,volume 3))

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Abstract

An analysis of the experimental situation in the field of the quantum Hall effect (QHE) in single heterojunctions is presented. The main factors governing the width of the QHE plateaus are highlighted and the way in which they influence the QHE is illustrated with experimental data. Using few symmetry assumptions, plateaus widths are obtained that agree well with the experimental ones. In total the lecture contains transport data from 8 outstanding experiments.

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© 1995 Springer Science+Business Media Dordrecht

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Groshev, A. (1995). Quantum Hall Effect. In: Balkanski, M., Yanchev, I. (eds) Fabrication, Properties and Applications of Low-Dimensional Semiconductors. NATO ASI Series, vol 3. Springer, Dordrecht. https://doi.org/10.1007/978-94-011-0089-2_19

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  • DOI: https://doi.org/10.1007/978-94-011-0089-2_19

  • Publisher Name: Springer, Dordrecht

  • Print ISBN: 978-94-010-4043-3

  • Online ISBN: 978-94-011-0089-2

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