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Molecular Beam Epitaxy — Fundamental Growth Aspects and Selected Contributions to Physics and Applications of Low-Dimensional Semiconductor Structures

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Book cover Fabrication, Properties and Applications of Low-Dimensional Semiconductors

Part of the book series: NATO ASI Series ((ASHT,volume 3))

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Abstract

The phrase “low-dimensional structures” was adopted to describe a wide range of man-made solid structures, in which the physical properties differ significantly from those of bulk solids because in at least one spatial direction the scale of the structure is very small [1]. The changes in the physical phenomena are so dramatic and the variety of possible structures is so large that low-dimensional structures form the basis for an important new branch of condensed matter physics [2]. In addition, the structures have a great potential in modern device technology, because their properties can be exploited for a whole new generation of electronic and optical devices based on the concept of wave function engineering [3].

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Authors and Affiliations

  1. Paul-Drude-Institut für Festkörperelektronik, D-10117, Berlin, Germany

    K. H. Ploog

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  1. Université Pierre et Marie Curie, Paris, France

    Minko Balkanski

  2. St Kliment Ohridski University, Sofia, Bulgaria

    Ivan Yanchev

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Ploog, K.H. (1995). Molecular Beam Epitaxy — Fundamental Growth Aspects and Selected Contributions to Physics and Applications of Low-Dimensional Semiconductor Structures. In: Balkanski, M., Yanchev, I. (eds) Fabrication, Properties and Applications of Low-Dimensional Semiconductors. NATO ASI Series, vol 3. Springer, Dordrecht. https://doi.org/10.1007/978-94-011-0089-2_1

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