Abstract
It is an exciting time to undertake theoretical studies of amorphous and glassy insulators. This is because theory and its prime tool, simulation, are reaching a level of realism necessary to explain many experimental observations and even to go beyond them in providing microscopic pictures of processes in disordered materials. In this paper we discuss the modeling of electronic structure and how this work may be developed to give qualitative insight into the localized-extended (Anderson) transition [1], a computationally and perhaps fundamentally valuable restatement of the electronic structure problem in terms of real-space localized (Wannier-like [2]) states, the impact of thermal fluctuations on electron states and transport, and the atomic-dynamical consequences of light exposure for photo-sensitive glasses.
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Drabold, D.A., Nakhmanson, S., Zhang, X. (2001). Electronic Structure of Amorphous Insulators and Photo-Structural Effects in Chalcogenide Glasses. In: Thorpe, M.F., Tichý, L. (eds) Properties and Applications of Amorphous Materials. NATO Science Series, vol 9. Springer, Dordrecht. https://doi.org/10.1007/978-94-010-0914-0_13
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DOI: https://doi.org/10.1007/978-94-010-0914-0_13
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