Abstract
The epitaxial growth of perovskite-type oxides on silicon offers a wide range of technological applications. Experimentally, this has been achieved by taking advantage of the lattice matching between ATiO3 and AO, and between AO and Si (A = Ba, Sr). Here, we report ab initio pseudopotential density functional calculations on the structural and electronic properties of the perovskite/alkaline-earth metal-oxide interfaces. A full relaxation of the coordinates was allowed and the subsequent pattern of dipoles at the interface was found. The valence and conduction band offsets were analyzed using a macroscopic averaging technique, and the potential barrier across the interface was obtained.
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Junquera, J., Ordejón, P. (2002). Ab-Initio Calculations on the Structural and Electronic Properties of BaO/BatiO3 And SrO/SrTiO3 Interfaces. In: Kotrla, M., Papanicolaou, N.I., Vvedensky, D.D., Wille, L.T. (eds) Atomistic Aspects of Epitaxial Growth. NATO Science Series, vol 65. Springer, Dordrecht. https://doi.org/10.1007/978-94-010-0391-9_44
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DOI: https://doi.org/10.1007/978-94-010-0391-9_44
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