Abstract
Capacitor nano structure for alternative current circuits by intercalation technology method is formed. It is shown the 100 times capacitance increase in comparison to well known volumetric-porous structures. Up to now the most important problem in the microelectronics, electron technique production miniaturization has been solved in the micron sizes. The same tendency is considered for capacitor technology. The different parameters, achieved in this direction are given in Table 1 [1].
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References
Energoizdat, M., (1987) in Kuchinskyj (ed.) Handbook Electrical capacitors and capacitor devices, Russia.
Onyshchuk, V.Ye. and Averkin, Ye.I. (1986), “Technology of radio capacitors production”, M Vysshaya Shkola, 192 pp., Russia.
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© 2002 Springer Science+Business Media Dordrecht
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Grygorchak, I.I., Seredyuk, B.O., Tovstyuk, K.D., Bakhmatyuk, B.P. (2002). High-Frequency Capacitor Nanostructure Formation by Intercalation. In: Julien, C., Pereira-Ramos, J.P., Momchilov, A. (eds) New Trends in Intercalation Compounds for Energy Storage. NATO Science Series, vol 61. Springer, Dordrecht. https://doi.org/10.1007/978-94-010-0389-6_45
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DOI: https://doi.org/10.1007/978-94-010-0389-6_45
Publisher Name: Springer, Dordrecht
Print ISBN: 978-1-4020-0595-4
Online ISBN: 978-94-010-0389-6
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